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FDMS037N08B 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FDMS037N08B
기능 MOSFET
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FDMS037N08B 데이터시트 및 FDMS037N08B PDF

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FDMS037N08B pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.08
1.04
1.00
0.96
0.92
-80
*Notes:
1. VGS = 0V
2. ID = 250μA
-40
TJ,
0
Junction
40 80
Temperature
[oC1]20
160
Figure 9. Maximum Safe Operating Area
1000
100
1ms
10 10ms
100ms
1 Operation in This Area
is Limited by R DS(on)
DC
*Notes:
0.1 1. Ta = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
0.01 0.1
1
10
VDS, Drain-Source Voltage [V]
100
Figure 11. Eoss vs. Drain to Source Voltage
3.0
Figure 8. On-Resistance Variation
vs. Temperature
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-80
*Notes:
1. VGS = 10V
2. ID = 50A
-40 0
40 80 120
TJ, Junction Temperature [oC]
160
Figure 10. Maximum Drain Current
vs. Case Temperature
140
120
100
80 VGS= 10V
60
40
20
RθJC= 1.2oC/W
0
25 50 75 100 125
TC, Case Temperature [oC]
150
Figure 12. Unclamped Inductive
Switching Capability
100
2.4
1.8
TJ = 25 oC
10
1.2 TJ = 150 oC
0.6
0
0 15 30 45 60 75
VDS, Drain to Source Voltage [V]
01.001
0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE (ms)
1000
©2012 Fairchild Semiconductor Corporation
FDMS037N08B Rev. C2
4
www.fairchildsemi.com

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FDMS037N08B 전자부품, 판매, 대치품
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2012 Fairchild Semiconductor Corporation
FDMS037N08B Rev. C2
7
www.fairchildsemi.com

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부품번호상세설명 및 기능제조사
FDMS037N08B

The functions of this components is a MOSFET.

Fairchild Semiconductor
Fairchild Semiconductor

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