Datasheet.kr    

FDPC8011S 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FDPC8011S
기능 MOSFET
제조업체 Fairchild Semiconductor
로     고 Fairchild Semiconductor 로고 
미리보기

( 핀배열 )


전체 17 페이지

		
FDPC8011S 데이터시트 및 FDPC8011S PDF

1페이지

FDPC8011S pdf, 반도체, 판매, 대치품
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
40
VGS = 10 V
VGS = 4.5 V
30 VGS = 3.5 V
VGS = 3 V
20
VGS = 2.5 V
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0 0.3 0.6 0.9 1.2 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
4.0
VGS = 2.5 V
3.5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3.0
2.5
VGS = 3 V
2.0
VGS = 3.5 V
1.5
1.0
0.5
0
VGS = 4.5 V VGS = 10 V
10 20
ID, DRAIN CURRENT (A)
30
40
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 13 A
VGS = 10 V
1.4
20
ID = 13 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
16
1.2 12
1.0 8 TJ = 125 oC
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
4
TJ = 25 oC
0
2 3 4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
40
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
30 VDS = 5 V
40
VGS = 0 V
10
20
10
0
1.0
TJ = 150 oC
TJ = 25 oC
TJ = -55 oC
1.5 2.0 2.5
VGS, GATE TO SOURCE VOLTAGE (V)
3.0
Figure 5. Transfer Characteristics
1 TJ = 150 oC
0.1
TJ = 25 oC
TJ = -55 oC
0.01
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2012 Fairchild Semiconductor Corporation
FDPC8011S Rev.C6
4
www.fairchildsemi.com

4페이지

FDPC8011S 전자부품, 판매, 대치품
Typical Characteristics (Q2 N-Channel) TJ = 25 oC unlenss otherwise noted
120
VGS = 10 V
100 VGS = 4.5 V
VGS = 3.5 V
80 VGS = 3 V
60
VGS = 2.5 V
40
20
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0 0.2 0.4 0.6 0.8 1.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 14. On-Region Characteristics
6
5 VGS = 2.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
3
VGS = 3 V
2 VGS = 3.5 V
1
VGS = 4.5 V VGS = 10 V
0
0 20 40 60 80 100 120
ID, DRAIN CURRENT (A)
Figure 15. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.6
ID = 27 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 16. Normalized On-Resistance
vs Junction Temperature
7
PULSE DURATION = 80 μs
6 DUTY CYCLE = 0.5% MAX
5 ID = 27 A
4
3
TJ = 125 oC
2
1
TJ = 25 oC
0
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs Gate to
Source Voltage
120
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
100
VDS = 5 V
80
60
40
20
0
1.0
TJ = 125 oC
TJ = 25 oC
TJ = -55 oC
1.5 2.0 2.5
VGS, GATE TO SOURCE VOLTAGE (V)
3.0
Figure 18. Transfer Characteristics
200
100 VGS = 0 V
10
1
0.1
0.01
TJ = 125 oC
TJ = 25 oC
TJ = -55 oC
1E-3
0.0 0.2 0.4 0.6 0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 19. Source to Drain Diode
Forward Voltage vs Source Current
1.0
©2012 Fairchild Semiconductor Corporation
FDPC8011S Rev.C6
7
www.fairchildsemi.com

7페이지





구       성총 17 페이지
다운로드[ FDPC8011S.PDF 데이터시트 ]
구매문의
일반 IC 문의 : 샘플 및 소량 구매
-------------------------------------------------------------------------------------------

전력반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드모듈 ) : 010-3582-2743

상호 : 아이지 인터내셔날, 전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :


관련 데이터시트

부품번호상세설명 및 기능제조사
FDPC8011S

The functions of this components is a MOSFET.

Fairchild Semiconductor
Fairchild Semiconductor

추천 데이터시트

부품번호상세설명 및 기능제조사
KF16N25D

MOSFET의 기능은 N Channel MOS Field effect transistor입니다. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies.( Vdss=250V, Id=13A )

KEC
KEC
FR9884

컨버터의 기능은 340KHz Synchronous Step-Down DC/DC Converter 입니다. The FR9884 is a synchronous step-down DC/DC converter that provides wide 4.5V to 18V input voltage range and 3A continuous load current capability.

Fitipower
Fitipower

www.DataSheet.kr    |   2018   |  연락처   |  링크모음   |   검색  |   사이트맵