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FDPC8012S 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FDPC8012S
기능 MOSFET
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FDPC8012S 데이터시트 및 FDPC8012S PDF

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FDPC8012S pdf, 반도체, 판매, 대치품
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
40
VGS = 10 V
VGS = 4.5 V
32
VGS = 3.5 V
VGS = 3 V
24
16
8
0
0.0
VGS = 2.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.2 0.4 0.6 0.8
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.0
Figure 1. On Region Characteristics
5
VGS = 2.5 V
4
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3
VGS = 3 V
2
1
VGS = 3.5 V
VGS = 4.5 V VGS = 10 V
0
0 8 16 24 32 40
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 13 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
30
25
ID = 13 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
20
15
10
5
0
2
TJ = 125 oC
TJ = 25 oC
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to
Source Voltage
40
VDS = 5 V
32
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
24
16
8
0
0
TJ = 150 oC
TJ = 25 oC
TJ = -55 oC
123
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
4
100
VGS = 0 V
10
1
TJ = 150 oC
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2012 Fairchild Semiconductor Corporation
FDPC8012S Rev.C1
4
www.fairchildsemi.com

4페이지

FDPC8012S 전자부품, 판매, 대치품
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted
120
VGS = 10 V
VGS = 4.5 V
90
VGS = 4 V
VGS = 3.5 V
VGS = 3 V
60
30
0
0.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.2 0.4 0.6
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.8
Figure 14. On-Region Characteristics
5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
3
VGS = 3 V
2 VGS = 3.5 V
1
VGS = 4 V VGS = 4.5 V VGS = 10 V
0
0 30 60 90 120
ID, DRAIN CURRENT (A)
Figure 15. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.6
ID = 26 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 16. Normalized On-Resistance
vs Junction Temperature
8
ID = 26 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
6
4
TJ = 125 oC
2
TJ = 25 oC
0
2 3 4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs Gate to
Source Voltage
120
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
100
VDS = 5 V
80
TJ = 125 oC
60
40
20
TJ = 25 oC
TJ = -55 oC
0
1.0 1.5 2.0 2.5 3.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 18. Transfer Characteristics
3.5
©2012 Fairchild Semiconductor Corporation
FDPC8012S Rev.C1
7
200
100 VGS = 0 V
10
1
0.1
0.01
TJ = 125 oC
TJ = 25 oC
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.0
Figure 19. Source to Drain Diode
Forward Voltage vs Source Current
www.fairchildsemi.com

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