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FDME820NZT 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FDME820NZT
기능 MOSFET
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FDME820NZT 데이터시트 및 FDME820NZT PDF

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FDME820NZT pdf, 반도체, 판매, 대치품
Typical Characteristics TJ = 25 °C unless otherwise noted
4.5
ID = 9 A
3.6
2.7
1.8
0.9
VDD = 8 V
VDD = 10 V
VDD = 12 V
0.0
0
369
Qg, GATE CHARGE (nC)
12
Figure 7. Gate Charge Characteristics
2000
1000
Ciss
Coss
f = 1 MHz
VGS = 0 V
Crss
100
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure8. CapacitancevsDrain
to Source Voltage
20
10
TJ = 25 oC
TJ = 100 oC
1
0.001
TJ = 125 oC
0.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)
Figure9. UnclampedInductive
Switching Capability
100
10-1
10-2
10-3
10-4
10-5
10-6
10-7
10-8
10-9
10-10
0
VGS = 0 V
TJ = 125 oC
TJ = 25 oC
3 6 9 12 15
VGS, GATE TO SOURCE VOLTAGE (V)
18
Figure 10. Gate Leakage Current vs Gate
to Source Voltage
100
10
100 us
1
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
0.1 TJ = MAX RATED
RθJA = 190 oC/W
TA = 25 oC
0.01
0.01 0.1
1
1 ms
10 ms
100 ms
1s
10 s
DC
10 100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
1000
100
10
SINGLE PULSE
RθJA = 190 oC/W
TA = 25 oC
1
0.1
10-4 10-3 10-2 10-1
1
10
t, PULSE WIDTH (s)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C2
4
www.fairchildsemi.com

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FDME820NZT 전자부품, 판매, 대치품
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©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C2
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Semiconductor. The datasheet is for reference information only.
Rev. I66
7 www.fairchildsemi.com

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부품번호상세설명 및 기능제조사
FDME820NZT

The functions of this components is a MOSFET.

Fairchild Semiconductor
Fairchild Semiconductor

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