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FDME905PT 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FDME905PT
기능 MOSFET
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FDME905PT 데이터시트 및 FDME905PT PDF

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FDME905PT pdf, 반도체, 판매, 대치품
Typical Characteristics TJ = 25 °C unless otherwise noted
4.5
ID = -8 A
VDD = -5 V
3000
Ciss
3.0 1000
VDD = -6 V
Coss
VDD = -7 V
1.5
Crss
0.0
0
4 8 12
Qg, GATE CHARGE (nC)
16
Figure 7. Gate Charge Characteristics
f = 1 MHz
VGS = 0 V
100
0.1
1
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure8. CapacitancevsDrain
to Source Voltage
100
10 100 μs
1 ms
1
0.1
0.01
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 175 oC/W
TA = 25 oC
0.001
0.1
1
10 ms
100 ms
1s
10 s
DC
10 30
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
2
DUTY CYCLE-DESCENDING ORDER
1
300
SINGLE PULSE
100 RθJA = 175 oC/W
TA = 25 oC
10
1
0.5
10-4 10-3 10-2 10-1
1
10 100
t, PULSE WIDTH (s)
Figure 10. Single Pulse Maximum
Power Dissipation
1000
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 175 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-4
10-3
10-2
10-1
1
10 100
t, RECTANGULAR PULSE DURATION (sec)
Figure 11. Junction-to-Ambient Transient Thermal Response Curve
1000
©2011 Fairchild Semiconductor Corporation
FDME905PT Rev.C4
4
www.fairchildsemi.com

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FDME905PT

The functions of this components is a MOSFET.

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