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FDZ661PZ 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FDZ661PZ
기능 MOSFET
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FDZ661PZ 데이터시트 및 FDZ661PZ PDF

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FDZ661PZ pdf, 반도체, 판매, 대치품
Typical Characteristics TJ = 25 °C unless otherwise noted
4.5
ID = -2.5 A
VDD = -8 V
3.0
VDD = -10 V
VDD = -12 V
1.5
0
024 6
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
8
10-1
10-2
10-3
10-4
10-5
10-6
10-7
10-8
10-9
10-10
0
VDS = 0 V
TJ = 125 oC
TJ = 25 oC
5 10
- VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Gate Leakage Current
vs Gate to Source Voltage
15
2000
1000
Ciss
100
Coss
Crss
f = 1 MHz
VGS = 0 V
10
0.1
1 10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. CapacitancevsDrain
to Source Voltage
20
50
10
100 us
1 1 ms
THIS AREA IS
0.1 LIMITED BY rDS(on)
SINGLE PULSE
0.01
TJ = MAX RATED
RθJA = 311 oC/W
TA = 25 oC
0.001
0.1
1
10 ms
100 ms
1s
10 s
DC
10
-VDS, DRAIN to SOURCE VOLTAGE (V)
100
Figure 10. Forward Bias Safe
Operating Area
1000
SINGLE PULSE
100 RθJA = 311 o C/W
TA = 25oC
10
1
0.1
10-4
10-3
10-2
10-1
1
t, PULSE WIDTH (sec)
10
Figure 11. Single Pulse Maximum Power Dissipation
100
1000
©2011 Fairchild Semiconductor Corporation
FDZ661PZ Rev.C
4
www.fairchildsemi.com

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FDZ661PZ 전자부품, 판매, 대치품
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©2011 Fairchild Semiconductor Corporation
FDZ661PZ Rev.C
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I60
7 www.fairchildsemi.com

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관련 데이터시트

부품번호상세설명 및 기능제조사
FDZ661PZ

The functions of this components is a MOSFET.

Fairchild Semiconductor
Fairchild Semiconductor

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