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FDS8958B 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FDS8958B
기능 MOSFET
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FDS8958B 데이터시트 및 FDS8958B PDF

1페이지

FDS8958B pdf, 반도체, 판매, 대치품
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
30
VGS = 10 V
24
VGS = 6 V
VGS = 4.5 V
18 VGS = 4 V
12
6
0
0
VGS = 3.5 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0.5 1.0 1.5 2.0 2.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
3.0
Figure 1. On Region Characteristics
3.0
VGS = 3.5 V
2.5
2.0
VGS = 4 V
VGS = 4.5 V
1.5
1.0
0.5
0
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
6 12 18
ID, DRAIN CURRENT (A)
VGS = 6 V
VGS = 10 V
24 30
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
ID = 6.4 A
1.6 VGS = 10 V
1.4
1.2
1.0
0.8
0.6
0.4
-75
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
75
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
60
ID = 3.2 A
45
30
15
2
TJ = 125 oC
TJ = 25 oC
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to
Source Voltage
30
PULSE DURATION = 80 µs
25 DUTY CYCLE = 0.5% MAX
VDS = 5 V
20
15
10
5
0
1
TJ = 125 oC
TJ = 25 oC
TJ = -55 oC
2345
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
6
30
VGS = 0 V
10
TJ = 125 oC
1
0.1
TJ = 25 oC
0.01
0.2
TJ = -55 oC
0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2008 Fairchild Semiconductor Corporation
FDS8958B Rev.C
4
www.fairchildsemi.com

4페이지

FDS8958B 전자부품, 판매, 대치품
Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted
30
24
18
12
6
0
0.0
VGS = -10 V
VGS = -6 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = -4.5 V
VGS = -4 V
VGS = -3.5 V
0.5 1.0 1.5 2.0 2.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
3.0
Figure 15. On- Region Characteristics
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
VGS = -3.5 V
VGS = -4 V
VGS = -4.5 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5%MAX
VGS = -6 V
6 12 18
-ID, DRAIN CURRENT (A)
VGS = -10 V
24 30
Figure 16. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.6
ID = -4.5 A
VGS = -10 V
1.4
1.2
1.0
0.8
0.6
-75
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 17. Normalized On-Resistance
vs Junction Temperature
200
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
160
ID = -2.3 A
120
80
40
0
2
TJ = 125 oC
TJ = 25 oC
468
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 18. On-Resistance vs Gate to
Source Voltage
30
PULSE DURATION = 80 µs
25 DUTY CYCLE = 0.5% MAX
VDS = -5 V
20
TJ = -55 oC
15
TJ = 25 oC
TJ = 125 oC
10
5
0
12345
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 19. Transfer Characteristics
6
30
VGS = 0 V
10
TJ = 125 oC
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 20. Source to Drain Diode
Forward Voltage vs Source Current
1.6
©2008 Fairchild Semiconductor Corporation
FDS8958B Rev.C
7
www.fairchildsemi.com

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