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FDC637BNZ 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FDC637BNZ
기능 MOSFET
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FDC637BNZ 데이터시트 및 FDC637BNZ PDF

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FDC637BNZ pdf, 반도체, 판매, 대치품
Typical Characteristics TJ = 25°C unless otherwise noted
4.5
4.0 ID = 6.2A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
1.5
VDD = 5V
VDD = 10V
VDD = 15V
3.0 4.5 6.0
Qg, GATE CHARGE(nC)
7.5
9.0
Figure 7. Gate Charge Characteristics
2000
1000
Ciss
Coss
100
f = 1MHz
Crss
VGS = 0V
50
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure8. CapacitancevsDrain
to Source Voltage
105
104 VDS = 0V
103
102
101 TJ = 150oC
100
10-1 TJ = 25oC
10-2
10-3
0
3 6 9 12 15
VGS, GATE TO SOURCE VOLTAGE (V)
18
Figure 9. Gate Leakage Current vs Gate to
Source Voltage
30
10
100us
1
THIS AREA IS
LIMITED BY rDS(on)
0.1
SINGLE PULSE
TJ = MAX RATED
RθJA = 156oC/W
TA = 25oC
0.01
0.1
1
10
VDS, DRAIN to SOURCE VOLTAGE (V)
1ms
10ms
100ms
1s
10s
DC
50
Figure 10. Forward Bias Safe
Operating Area
1000
VGS = 4.5V
100
SINGLE PULSE
RθJA = 156oC/W
TA = 25oC
10
1
0.5
10-4
10-3 10-2 10-1 100
t, PULSE WIDTH (s)
101
Figure 11. Single Pulse Maximum Power Dissipation
©2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
4
102 103
www.fairchildsemi.com

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FDC637BNZ 전자부품, 판매, 대치품
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부품번호상세설명 및 기능제조사
FDC637BNZ

The functions of this components is a MOSFET.

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