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FDT1600N10ALZ 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FDT1600N10ALZ
기능 MOSFET
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FDT1600N10ALZ 데이터시트 및 FDT1600N10ALZ PDF

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FDT1600N10ALZ pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.10
1.05
1.00
0.95
0.90
-80
*Notes:
1. VGS = 0V
2. ID = 250μA
-40 0 40 80 120
TJ, Junction Temperature [oC]
160
Figure 9. Maximum Safe Operating Area
20
10
100us
1 1ms
10ms
Operation in This Area
100ms
is Limited by R DS(on)
0.1 *Notes:
DC
1. Ta = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
0.1 1 10
VDS, Drain-Source Voltage [V]
100
Figure 11. Eoss vs. Drain to Source Voltage
0.25
0.20
0.15
0.10
0.05
Figure 8. On-Resistance Variation
vs. Temperature
2.1
1.8
1.5
1.2
0.9
0.6
0.3
-80
*Notes:
1. VGS = 10V
2. ID = 2.8A
-40 0 40 80 120
TJ, Junction Temperature [oC]
160
Figure 10. Maximum Drain Current
vs. Case Temperature
6
5
VGS= 10V
4
3
2 VGS= 5V
1
RθJC= 12oC/W
0
25 50 75 100 125
TC, Case Temperature [oC]
150
Figure 12. Unclamped Inductive
Switching Capability
6
5
4
3 TJ = 25 oC
TJ = 125 oC
2
0
0 20 40 60 80 100
VDS, Drain to Source Voltage [V]
01.001
0.01 0.1
tAV, TIME IN AVALANCHE (ms)
1
©2012 Fairchild Semiconductor Corporation
FDT1600N10ALZ Rev. C2
4
www.fairchildsemi.com

4페이지

FDT1600N10ALZ 전자부품, 판매, 대치품
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2012 Fairchild Semiconductor Corporation
FDT1600N10ALZ Rev. C2
7
www.fairchildsemi.com

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부품번호상세설명 및 기능제조사
FDT1600N10ALZ

The functions of this components is a MOSFET.

Fairchild Semiconductor
Fairchild Semiconductor


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