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FDG8842CZ 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FDG8842CZ
기능 MOSFET
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FDG8842CZ 데이터시트 및 FDG8842CZ PDF

1페이지

FDG8842CZ pdf, 반도체, 판매, 대치품
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
2.20
VGS = 4.5V
1.76
VGS = 2.7V
VGS = 2.0V
1.32
0.88
0.44
VGS =1.8V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = 1.5V
0.00
0.0
0.5 1.0 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
2.0
2.6
VGS = 1.8V
2.2
VGS = 2.0V
1.8
1.4 VGS = 3.5V
VGS = 2.7V
1.0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
0.6
0.00 0.44 0.88
1.32
ID, DRAIN CURRENT(A)
VGS = 4.5V
1.76 2.20
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 0.75A
1.4 VGS = 4.5V
1.2
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On - Resistance
vs Junction Temperature
150
2.20
1.76
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
1.32
VDD = 5V
0.88
TJ = 150oC
0.44
TJ = 25oC
0.00
0.0
TJ = -55oC
0.5 1.0 1.5 2.0
VGS, GATE TO SOURCE VOLTAGE (V)
2.5
Figure 5. Transfer Characteristics
0.8
ID =0.38A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
0.6
TJ = 125oC
0.4
TJ = 25oC
0.2
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
2
1 VGS = 0V
5
0.1 TJ = 150oC
0.01
TJ = 25oC
0.001
0.2
TJ = -55oC
0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
4
www.fairchildsemi.com

4페이지

FDG8842CZ 전자부품, 판매, 대치품
Typical Characteristics(Q2 P-Channel) TJ = 25°C unless otherwise noted
5
ID = -0.41A
4
200
100
Ciss
3 VDD = -5V
VDD = -10V
2 VDD = -15V
1
0
0.0 0.4 0.8 1.2 1.6
Qg, GATE CHARGE(nC)
Figure 19. Gate Charge Characteristics
Coss
10
Crss
f = 1MHz
VGS = 0V
01.1 1 10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 20. Capacitance vs Drain
to Source Voltage
25
3
1 LIMITED
r DS(on)
1ms
10ms
0.1 SINGLE PULSE
TJ = MAX RATED
RθJA = 415oC/W
TA = 25oC
0.01
0.3
1
100ms
1s
DC
10 50
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 21. Forward Bias Safe
Operating Area
20 SINGLE PULSE
10 RθJA= 415OC/W
TA = 25OC
1
0.1
0.001 0.01
0.1 1 10
t, PULSE WIDTH (s)
100
Figure 22. Single Pulse Maximum Power
Dissipation
1000
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
SINGLE PULSE
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
RθJA = 415oC/W
0.01
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 23. Transient Thermal Response Curve
102
103
©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
7
www.fairchildsemi.com

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부품번호상세설명 및 기능제조사
FDG8842CZ

The functions of this components is a MOSFET.

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