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FDD3860 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FDD3860
기능 MOSFET
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FDD3860 데이터시트 및 FDD3860 PDF

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FDD3860 pdf, 반도체, 판매, 대치품
Typical Characteristics TJ = 25°C unless otherwise noted.
10
ID = 5.9A
8
6
VDD = 25V
VDD = 50V
VDD = 75V
4
2
0
0 5 10 15 20
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
25
10
8
6
4
TJ = 125oC
TJ = 25oC
2
3000
1000
Ciss
Coss
100
f = 1MHz
VGS = 0V
Crss
10
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. Capacitance vs. Drain
to Source Voltage
35
28
VGS = 10V
21
14
RθJC = 1.8oC/W
7
100
1
0.01
0.1 1 10
tAV, TIME IN AVALANCHE (ms)
Figure9. Unclamped Inductive
Switching Capability
100
100
10
100us
1
THIS AREA IS
LIMITED BY rds(on)
0.1
0.1
1
SINGLE PULSE
TJ = MAX RATED
RθJC = 1.8oC/W
TC = 25oC
10
1ms
10ms
DC
100 300
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
150
105
VGS = 10V
104
103
SINGLE PULSE
RθJC = 1.8oC/W
102
10
10-6
10-5
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
1
Figure 12. Single Pulse Maximum Power Dissipation
©2008 Fairchild Semiconductor Corporation
FDD3860 Rev.1.3
4
www.fairchildsemi.com

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FDD3860 전자부품, 판매, 대치품

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