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FDD2582 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FDD2582
기능 MOSFET
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FDD2582 데이터시트 및 FDD2582 PDF

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FDD2582 pdf, 반도체, 판매, 대치품
Typical Characteristics TC = 25°C unless otherwise noted
200 100
100
10µs
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
100µs
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10 1ms
OPERATION IN THIS
AREA MAY BE
1 LIMITED BY rDS(ON)
10ms
0.1
1
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
DC
10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
300
Figure 5. Forward Bias Safe Operating Area
10 STARTING TJ = 25oC
1
0.001
STARTING TJ = 150oC
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
10
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
40 VDD = 15V
30
20
TJ = 25oC
10
TJ = 175oC
TJ = -55oC
50
VGS = 10V
40 PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
30
20
10
VGS = 7V
VGS = 6V
VGS = 5V
0
3.5
4.0 4.5 5.0 5.5 6.0 6.5
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
7.0
90
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
80
VGS = 6V
70
60 VGS = 10V
50
0
5 10 15 20
ID, DRAIN CURRENT (A)
25
Figure 9. Drain to Source On Resistance vs Drain
Current
0
0
1234
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
5
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.5
2.0
1.5
1.0
0.5
-80
VGS = 10V, ID = 21A
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2002 Fairchild Semiconductor Corporation
FDD2582 Rev. 1.2

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FDD2582 전자부품, 판매, 대치품
Thermal Resistance vs. Mounting Pad Area
The max imum r ated j unction t emperature, T JM, an d t he
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, PDM, in an
application. T herefore t he a pplication’s amb ient
temperature, TA (oC), an d t hermal resistance R θJA (oC/W)
must be reviewed to en sure t hat T JM is ne ver ex ceeded.
Equation 1 ma thematically represents the relationship and
serves as the basis for establishing the rating of the part.
125
100
75
PDM
=
-(--T---J---M-------–-----T---A-----)
Rθ JA
(EQ. 1)
50
RθJA = 33.32+ 23.84/(0.268+Area) EQ.2
RθJA = 33.32+ 154/(1.73+Area) EQ.3
In us ing su rface mount de vices suc h as t he TO-252
package, the environment in which it is applied will have a
significant in fluence o n t he p art’s cur rent and max imum
power d issipation ratings. Precise d etermination of PDM is
complex and influenced by many factors:
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
2. T he number o f co pper la yers and t he t hickness of t he
board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. F or no n s teady st ate ap plications, t he pu lse w idth, t he
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Fairchild p rovides t hermal information to as sist t he
designer’s preliminary ap plication ev aluation. F igure 21
defines t he R θJA f or t he de vice as a f unction of t he t op
copper ( component si de) ar ea. T his is f or a h orizontally
positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power with no air flow. This graph provides
the necessary information for calculation of the steady state
junction t emperature o r p ower di ssipation. P ulse
applications ca n be ev aluated us ing t he F airchild device
Spice t hermal model or m anually u tilizing t he no rmalized
maximum transient thermal impedance curve.
Thermal resistances co rresponding to ot her co pper areas
can be obtained f rom F igure 21 or by calculation using
Equation 2 or 3. Equation 2 is used for copper area defined
in in ches s quare a nd eq uation 3 is for area in centimeters
square. The area, in square inches or square centimeters is
the top copper area including the gate and source pads.
Rθ JA = 33.32 + (---0---.--2---6--28---3--+-.-8---A4----r---e---a---)
(EQ. 2)
Area in Inches Squared
Rθ JA = 33.32 + (---1---.-7---3---1--+-5---4-A----r---e---a---)
(EQ. 3)
Area in Centimeters Squared
25
0.01
(0.0645)
0.1
(0.645)
1
(6.45)
10
(64.5)
AREA, TOP COPPER AREA in2 (cm2)
Figure 21. Thermal Resistance vs Mounting
Pad Area
©2002 Fairchild Semiconductor Corporation
FDD2582 Rev. 1.2

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FDD2582

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