Typical Characteristics TC = 25°C unless otherwise noted

200 100

100

10µs

If R = 0

tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)

100µs

If R ≠ 0

tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]

10 1ms

OPERATION IN THIS

AREA MAY BE

1 LIMITED BY rDS(ON)

10ms

0.1

1

SINGLE PULSE

TJ = MAX RATED

TC = 25oC

DC

10 100

VDS, DRAIN TO SOURCE VOLTAGE (V)

300

Figure 5. Forward Bias Safe Operating Area

10 STARTING TJ = 25oC

1

0.001

STARTING TJ = 150oC

0.01

0.1

1

tAV, TIME IN AVALANCHE (ms)

10

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

50

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

40 VDD = 15V

30

20

TJ = 25oC

10

TJ = 175oC

TJ = -55oC

50

VGS = 10V

40 PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

TC = 25oC

30

20

10

VGS = 7V

VGS = 6V

VGS = 5V

0

3.5

4.0 4.5 5.0 5.5 6.0 6.5

VGS , GATE TO SOURCE VOLTAGE (V)

Figure 7. Transfer Characteristics

7.0

90

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

80

VGS = 6V

70

60 VGS = 10V

50

0

5 10 15 20

ID, DRAIN CURRENT (A)

25

Figure 9. Drain to Source On Resistance vs Drain

Current

0

0

1234

VDS , DRAIN TO SOURCE VOLTAGE (V)

Figure 8. Saturation Characteristics

5

3.0

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

2.5

2.0

1.5

1.0

0.5

-80

VGS = 10V, ID = 21A

-40 0 40 80 120 160

TJ, JUNCTION TEMPERATURE (oC)

200

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

©2002 Fairchild Semiconductor Corporation

FDD2582 Rev. 1.2

Thermal Resistance vs. Mounting Pad Area

The max imum r ated j unction t emperature, T JM, an d t he

thermal resistance of the heat dissipating path determines

the maximum allowable device power dissipation, PDM, in an

application. T herefore t he a pplication’s amb ient

temperature, TA (oC), an d t hermal resistance R θJA (oC/W)

must be reviewed to en sure t hat T JM is ne ver ex ceeded.

Equation 1 ma thematically represents the relationship and

serves as the basis for establishing the rating of the part.

125

100

75

PDM

=

-(--T---J---M-------–-----T---A-----)

Rθ JA

(EQ. 1)

50

RθJA = 33.32+ 23.84/(0.268+Area) EQ.2

RθJA = 33.32+ 154/(1.73+Area) EQ.3

In us ing su rface mount de vices suc h as t he TO-252

package, the environment in which it is applied will have a

significant in fluence o n t he p art’s cur rent and max imum

power d issipation ratings. Precise d etermination of PDM is

complex and influenced by many factors:

1. Mounting pad area onto which the device is attached and

whether there is copper on one side or both sides of the

board.

2. T he number o f co pper la yers and t he t hickness of t he

board.

3. The use of external heat sinks.

4. The use of thermal vias.

5. Air flow and board orientation.

6. F or no n s teady st ate ap plications, t he pu lse w idth, t he

duty cycle and the transient thermal response of the part,

the board and the environment they are in.

Fairchild p rovides t hermal information to as sist t he

designer’s preliminary ap plication ev aluation. F igure 21

defines t he R θJA f or t he de vice as a f unction of t he t op

copper ( component si de) ar ea. T his is f or a h orizontally

positioned FR-4 board with 1oz copper after 1000 seconds

of steady state power with no air flow. This graph provides

the necessary information for calculation of the steady state

junction t emperature o r p ower di ssipation. P ulse

applications ca n be ev aluated us ing t he F airchild device

Spice t hermal model or m anually u tilizing t he no rmalized

maximum transient thermal impedance curve.

Thermal resistances co rresponding to ot her co pper areas

can be obtained f rom F igure 21 or by calculation using

Equation 2 or 3. Equation 2 is used for copper area defined

in in ches s quare a nd eq uation 3 is for area in centimeters

square. The area, in square inches or square centimeters is

the top copper area including the gate and source pads.

Rθ JA = 33.32 + (---0---.--2---6--28---3--+-.-8---A4----r---e---a---)

(EQ. 2)

Area in Inches Squared

Rθ JA = 33.32 + (---1---.-7---3---1--+-5---4-A----r---e---a---)

(EQ. 3)

Area in Centimeters Squared

25

0.01

(0.0645)

0.1

(0.645)

1

(6.45)

10

(64.5)

AREA, TOP COPPER AREA in2 (cm2)

Figure 21. Thermal Resistance vs Mounting

Pad Area

©2002 Fairchild Semiconductor Corporation

FDD2582 Rev. 1.2