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FDD306P 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FDD306P
기능 MOSFET
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FDD306P 데이터시트 및 FDD306P PDF

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FDD306P pdf, 반도체, 판매, 대치품
Typical Characteristics
5
ID = -6.7A
4
3
2
VDS = -4V
-8V
-6V
1
0
0 4 8 12 16 20
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
100
RDS(ON) LIMIT
10
1
1ms
10ms
100ms
1s
10s
DC
VGS =-4.5V
SINGLE PULSE
0.1 RθJA = 96oC/W
TA = 25 oC
0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
2400
2000
f = 1MHz
VGS = 0 V
1600
1200
800
Coss
400
Crss
Ciss
0
0369
-VDS, DRAIN TO SOURCE VOLTAGE (V)
12
Figure 8. Capacitance Characteristics.
20
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
15
10
5
0
0.001
0.01
0.1 1
t1, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA (t) = r(t) * RθJA
RθJA = 96 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1/t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDD306P Rev. 2.2
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FDD306P

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