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FDPF045N10A 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FDPF045N10A
기능 MOSFET
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FDPF045N10A 데이터시트 및 FDPF045N10A PDF

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FDPF045N10A pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.10
1.05
1.00
0.95
0.90
-100
*Notes:
1. VGS = 0V
2. ID = 250μA
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
vs. Case Temperature
500
100 100μs
10
1ms
Operation in This Area
1 is Limited by R DS(on)
10ms
100ms
0.1
0.01
0.001
0.1
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
DC
1 10 100 200
VDS, Drain-Source Voltage [V]
Figure 11. Eoss vs. Drain to Source Voltage
5
4
3
2
1
0
0 25 50 75 100
VDS, Drain to Source Voltage [V]
Figure 8. On-Resistance Variation
vs. Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-100
*Notes:
1. VGS = 10V
2. ID = 67A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
75
VGS = 10V
60
45
30
15
RθJC = 3.5oC/W
0
25 50 75 100 125 150
TC, Case Temperature [oC]
175
©2011 Fairchild Semiconductor Corporation
FDPF045N10A Rev. C3
4
www.fairchildsemi.com

4페이지

FDPF045N10A 전자부품, 판매, 대치품
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --G--a--t-e--P---u-l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDPF045N10A Rev. C3
7
www.fairchildsemi.com

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부품번호상세설명 및 기능제조사
FDPF045N10A

The functions of this components is a MOSFET.

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