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FDPF085N10A 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FDPF085N10A
기능 MOSFET
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FDPF085N10A 데이터시트 및 FDPF085N10A PDF

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FDPF085N10A pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.12
1.08
1.04
1.00
0.96
0.92-80
*Notes:
1. VGS = 0V
2. ID = 250μA
-40 0 40 80 120 160 200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
500
100 100μs
1ms
10
10ms
1 Operation in This Area
is Limited by R DS(on)
100ms
DC
*Notes:
0.1 1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
0.010.1 1 10
VDS, Drain-Source Voltage [V]
100 200
Figure 11. Eoss vs. Drain to Source Voltage
2.5
2.0
1.5
1.0
Figure 8. On-Resistance Variation
vs. Temperature
2.5
2.0
1.5
1.0
0.5
-80
*Notes:
1. VGS = 10V
2. ID = 96A
-40 0 40 80 120 160 200
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
45
VGS= 10V
36
27
18
9
RθJC = 4.5oC/W
0
25 50 75 100 125 150
TC, Case Temperature [oC]
Figure 12. Unclamped Inductive
Switching Capability
175
30
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
10 STARTING TJ = 25oC
STARTING TJ = 150oC
0.5
0.0 0
20 40 60 80
VDS, Drain to Source Voltage [V]
100
1
0.01
0.1 1 10 100 300
tAV, TIME IN AVALANCHE (ms)
©2011 Fairchild Semiconductor Corporation
FDPF085N10A Rev. C1
4
www.fairchildsemi.com

4페이지

FDPF085N10A 전자부품, 판매, 대치품
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDPF085N10A Rev. C1
7
www.fairchildsemi.com

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부품번호상세설명 및 기능제조사
FDPF085N10A

The functions of this components is a MOSFET.

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