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FDPF035N06B 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FDPF035N06B
기능 MOSFET
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FDPF035N06B 데이터시트 및 FDPF035N06B PDF

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FDPF035N06B pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.10
1.05
1.00
0.95
0.90
-100
*Notes:
1. VGS = 0V
2. ID = 250μA
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
1000
100
10
Operation in This Area
1 is Limited by R DS(on)
100μs
1ms
10ms
100ms
DC
0.1
0.01
0.1
SINGLE PULSE
TC = 25oC
TJ = 175oC
RθJC = 3.24oC/W
1 10
VDS, Drain-Source Voltage [V]
100
Figure 11. Eoss vs. Drain to Source Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
10 20 30 40 50
VDS, Drain to Source Voltage [V]
60
Figure 8. On-Resistance Variation
vs. Temperature
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-100
*Notes:
1. VGS = 10V
2. ID = 88A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
100
VGS = 10V
80
60
40
20
RθJC = 3.24oC/W
0
25 50 75 100 125 150
TC, Case Temperature [oC]
175
Figure 12. Unclamped Inductive
Switching Capability
200
100
TJ = 25 oC
10 TJ = 150 oC
01.001
0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE (ms)
1000
©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
4
www.fairchildsemi.com

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FDPF035N06B 전자부품, 판매, 대치품
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
7
www.fairchildsemi.com

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FDPF035N06B

The functions of this components is a MOSFET.

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