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FDMS7556S 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FDMS7556S
기능 MOSFET
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FDMS7556S 데이터시트 및 FDMS7556S PDF

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FDMS7556S pdf, 반도체, 판매, 대치품
Typical Characteristics TJ = 25 °C unless otherwise noted
10
ID = 35 A
8
6
4
2
VDD = 10 V
VDD = 13 V
VDD = 16 V
0
0 20 40 60 80 100
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
10000
1000
Ciss
Coss
f = 1 MHz
VGS = 0 V
Crss
100
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure8. CapacitancevsDrain
to Source Voltage
50 225
TJ = 25 oC
180
VGS = 10 V
10
TJ = 100 oC
135 VGS = 4.5 V
TJ = 125 oC
90
Limited by Package
RθJC = 1.3 oC/W
45
1
0.01
0.1 1 10 100
tAV, TIME IN AVALANCHE (ms)
Figure9. UnclampedInductive
Switching Capability
1000
300
100
1ms
10
10 ms
THIS AREA IS
1 LIMITED BY rDS(on)
0.1
0.01
0.01
SINGLE PULSE
TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
0.1 1
100 ms
1s
10 s
DC
10 100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
150
1000
100
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
VGS = 10V
10
1
0.5
10-3
10-2
10-1
1
10
t, PULSE WIDTH (sec)
100
Figure 12. Single Pulse Maximum
Power Dissipation
1000
©2013 Fairchild Semiconductor Corporation
FDMS7556S Rev.C4
4
www.fairchildsemi.com

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FDMS7556S

The functions of this components is a MOSFET.

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