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FDMS8558SDC 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FDMS8558SDC
기능 MOSFET
제조업체 Fairchild Semiconductor
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FDMS8558SDC 데이터시트 및 FDMS8558SDC PDF

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FDMS8558SDC pdf, 반도체, 판매, 대치품
Typical Characteristics TJ = 25 °C unless otherwise noted
140
VGS = 10V
120 VGS = 4.5 V
VGS = 3.5 V
100
VGS = 3 V
VGS = 2.5 V
80
60
40
20
0
0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.2 0.4 0.6
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
0.8
6
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
5
4
VGS = 2.5 V
3
2
VGS = 4.5 V
VGS = 3.5 V
VGS = 3 V
1
VGS = 10 V
0
0 20 40 60 80 100 120 140
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 38 A
1.5 VGS = 10 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
6
PULSE DURATION = 80 μs
5 DUTY CYCLE = 0.5% MAX
ID = 38 A
4
3
2 TJ = 125 oC
1
TJ = 25 oC
0
23456789
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
140
PULSE DURATION = 80 μs
120 DUTY CYCLE = 0.5% MAX
VDS = 5 V
100
80
60
TJ = 125 oC
TJ = 25 oC
40
TJ = -55 oC
20
0
1.2 1.5 1.8 2.1 2.4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
2.7
200
100 VGS = 0 V
TJ = 125 oC
10
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.0
0.2 0.4 0.6 0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.0
©2012 Fairchild Semiconductor Corporation
FDMS8558SDC Rev.C2
4
www.fairchildsemi.com

4페이지

FDMS8558SDC 전자부품, 판매, 대치품
Typical Characteristics (continued)
SyncFETTM Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS8558SDC.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
40
35
30
25
20
15
10
5
0
-5
700
di/dt = 300 A/μs
800 900
TIME (ns)
1000
1100
10-2
10-3
10-4
10-5
10-6
0
TJ = 125 oC
TJ = 100 oC
TJ = 25 oC
5 10 15 20
VDS, REVERSE VOLTAGE (V)
25
Figure 14. FDMS8558SDC SyncFETTM body
diode reverse recovery characteristic
Figure 15. SyncFETTM body diode reverse
leakage versus drain-source voltage
©2012 Fairchild Semiconductor Corporation
FDMS8558SDC Rev.C2
7
www.fairchildsemi.com

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부품번호상세설명 및 기능제조사
FDMS8558SDC

The functions of this components is a MOSFET.

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