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FDMS8560S 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FDMS8560S
기능 MOSFET
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FDMS8560S 데이터시트 및 FDMS8560S PDF

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FDMS8560S pdf, 반도체, 판매, 대치품
Typical Characteristics TJ = 25 °C unless otherwise noted
10
ID = 35 A
8
VDD = 10 V
6
VDD = 13 V
4
VDD = 15 V
2
0
0 20 40 60 80
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
10000
1000
Ciss
Coss
100
Crss
f = 1 MHz
VGS = 0 V
10
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure8. Capacitance vsDrain
to Source Voltage
100
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
1
0.001
0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE (ms)
1000
Figure9. Unclamped Inductive
Switching Capability
500
100
100 us
10
THIS AREA IS
1 LIMITED BY rDS(on)
SINGLE PULSE
0.1 TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
0.01
0.01 0.1
1
10
VDS, DRAIN to SOURCE VOLTAGE (V)
1 ms
10 ms
100 ms
1s
10 s
DC
100
Figure 11. Forward Bias Safe
Operating Area
200
160
VGS = 10 V
120
VGS = 4.5 V
80
40 Limited by Package
RθJC = 1.9 oC/W
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
150
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
10000
1000
100
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
10
1
0.1
10-4 10-3 10-2 10-1 100 101 100 1000
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum
Power Dissipation
©2012 Fairchild Semiconductor Corporation
FDMS8560S Rev.D2
4
www.fairchildsemi.com

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FDMS8560S 전자부품, 판매, 대치품

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The functions of this components is a MOSFET.

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