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FDMS3602S 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FDMS3602S
기능 MOSFET
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FDMS3602S 데이터시트 및 FDMS3602S PDF

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FDMS3602S pdf, 반도체, 판매, 대치품
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted.
40
VGS = 10 V
VGS = 4.5 V
30
VGS = 4 V
VGS = 3.5 V
20
10
0
0.0
VGS = 3 V PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.2 0.4 0.6 0.8
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.0
Figure 1. On Region Characteristics
6
PULSE DURATION = 80 μs
5 DUTY CYCLE = 0.5% MAX
VGS = 3 V
4
3
VGS = 3.5 V
2 VGS = 4 V VGS = 4.5 V
1
VGS = 10 V
0
0 10 20 30 40
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
1.6
ID = 15 A
1.4 VGS = 10 V
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs. Junction Temperature
25
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
20
ID = 15 A
15
10 TJ = 125 oC
5
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs. Gate to
Source Voltage
10
40
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
30
VDS = 5 V
20
TJ = 150 oC
10
0
1
TJ = 25 oC
TJ = -55 oC
23
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
4
40
VGS = 0 V
10
TJ = 150 oC
1
0.1
TJ = 25 oC
TJ = -55 oC
0.01
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
©2011 Fairchild Semiconductor Corporation
FDMS3602S Rev.1.12
4
www.fairchildsemi.com

4페이지

FDMS3602S 전자부품, 판매, 대치품
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted.
100
80
60
40
20
0
0.0
VGS = 10 V
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3 V
0.2 0.4 0.6 0.8
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.0
Figure 14. On- Region Characteristics
8
VGS = 3 V
6
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
4
VGS = 4 V
2
VGS = 4.5 V VGS = 10 V
0
0 20 40 60 80 100
ID, DRAIN CURRENT (A)
Figure 15. Normalized on-Resistance vs. Drain
Current and Gate Voltage
1.6
ID = 26 A
VGS = 10 V
1.4
1.2
1.0
0.8
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 16. Normalized On-Resistance
vs. Junction Temperature
12
10
8
6
4
2
0
2
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 26 A
TJ = 125 oC
TJ = 25 oC
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 17. On-Resistance vs. Gate to
Source Voltage
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
80
VDS = 5 V
TJ = 125 oC
60
TJ = 25 oC
40
20
TJ = -55 oC
0
1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 18. Transfer Characteristics
©2011 Fairchild Semiconductor Corporation
FDMS3602S Rev.1.12
7
200
100 VGS = 0 V
TJ = 125 oC
10
1 TJ = 25 oC
0.1
0.0
TJ = -55 oC
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 19. Source to Drain Diode
Forward Voltage vs. Source Current
www.fairchildsemi.com

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