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FDMS3610S 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FDMS3610S
기능 MOSFET
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FDMS3610S 데이터시트 및 FDMS3610S PDF

1페이지

FDMS3610S pdf, 반도체, 판매, 대치품
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
70
60
50
40
30
20
10
0
0.0
VGS = 10 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 2.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.3 0.6 0.9 1.2
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.5
Figure 1. On Region Characteristics
3.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
2.5
VGS = 2.5 V
2.0
1.5
VGS = 3 V
1.0
0.5
0
VGS = 3.5 V VGS = 4.5 V VGS = 10 V
10 20 30 40 50 60 70
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
ID = 17.5 A
1.6 VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
20
ID = 17.5 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
16
12
8
TJ = 125 oC
4
TJ = 25 oC
0
2 3 4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
70
PULSE DURATION = 80 μs
60 DUTY CYCLE = 0.5% MAX
VDS = 5 V
50
40
TJ = 150 oC
30
TJ = 25 oC
20
TJ = -55 oC
10
0
0.5 1.0 1.5 2.0 2.5 3.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
70
VGS = 0 V
10
TJ = 150 oC
1
0.1
0.01
TJ = 25 oC
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2011 Fairchild Semiconductor Corporation
FDMS3610S Rev.C1
4
www.fairchildsemi.com

4페이지

FDMS3610S 전자부품, 판매, 대치품
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted
120
100
80
60
40
20
0
0.0
VGS = 10 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 2.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.3 0.6 0.9 1.2 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
4
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3 VGS = 2.5 V
2 VGS = 3 V VGS = 3.5 V
1
VGS = 4.5 V VGS = 10 V
0
0 20 40 60 80 100 120
ID, DRAIN CURRENT (A)
Figure 14. On-Region Characteristics
Figure 15. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.6
ID = 30 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 16. Normalized On-Resistance
vs Junction Temperature
7
PULSE DURATION = 80 μs
6 DUTY CYCLE = 0.5% MAX
5
ID = 30 A
4
3
TJ = 125 oC
2
1 TJ = 25 oC
0
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs Gate to
Source Voltage
120
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
100
VDS = 5 V
80
60
TJ = 125 oC
TJ = 25 oC
40
TJ = -55 oC
20
0
1.0 1.5 2.0 2.5
VGS, GATE TO SOURCE VOLTAGE (V)
3.0
Figure 18. Transfer Characteristics
200
100 VGS = 0 V
10
1
0.1
0.01
TJ = 125 oC
TJ = 25 oC
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.0
Figure 19. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDMS3610S Rev.C1
7
www.fairchildsemi.com

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