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FDMS3615S 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FDMS3615S
기능 MOSFET
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FDMS3615S 데이터시트 및 FDMS3615S PDF

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FDMS3615S pdf, 반도체, 판매, 대치품
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
45
36
27
18
9
0
0.0
VGS = 4 V
VGS = 3.5 V
VGS = 10 V
VGS = 6 V
VGS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.5 1.0 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
8
VGS = 3 V
6
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
VGS = 3.5 V
2 VGS = 4 V
VGS = 6 V
VGS = 10 V
0
0 9 18 27 36 45
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 16 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
30
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
25
ID = 16 A
20
15
TJ = 125 oC
10
5
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
45
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
36
VDS = 5 V
27
TJ = 150 oC
18
TJ = 25 oC
9
TJ = -55 oC
0
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
50
VGS = 0 V
10
1 TJ = 150 oC
0.1
0.01
TJ = 25 oC
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDMS3615S Rev.C6
4
www.fairchildsemi.com

4페이지

FDMS3615S 전자부품, 판매, 대치품
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted
36
VGS = 10 V
VGS = 5.5 V
27 VGS = 4 V
VGS = 3.5 V
18
VGS = 3 V
9
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0 0.5 1.0 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 14. On-Region Characteristics
8
VGS = 3 V
6
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
VGS = 3.5 V
2
VGS = 4 V VGS = 5.5 V VGS = 10 V
0
0 9 18 27 36
ID, DRAIN CURRENT (A)
Figure 15. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.6
ID = 18 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 16. Normalized On-Resistance
vs Junction Temperature
15
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
12
ID = 18 A
9
6 TJ = 125 oC
3
TJ = 25 oC
0
246
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs Gate to
Source Voltage
8
36
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
27
VDS = 5 V
TJ = 150 oC
18
TJ = 25 oC
9
TJ = -55 oC
0
1.0 1.5 2.0 2.5 3.0 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 18. Transfer Characteristics
50
VGS = 0 V
10
TJ = 125 oC
1
0.1
0.01
TJ = 25 oC
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.0
Figure 19. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDMS3615S Rev.C6
7
www.fairchildsemi.com

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