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Si7111EDN 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 Si7111EDN
기능 P-Channel 30 V (D-S) MOSFET
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Si7111EDN 데이터시트 및 Si7111EDN PDF

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Si7111EDN pdf, 반도체, 판매, 대치품
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si7111EDN
Vishay Siliconix
Axis Title
4.5
ID = 10 A
3.6
VDS = 15 V
2.7
VDS = 10 V
1.8
0.9
10000
VDS = 20 V
1000
100
Axis Title
1.6 10000
1.4 ID = 10 A
1.2
VGS = 4.5 V
1000
1.0 VGS = 2.5 V
100
0.8
0 10
0 12 24 36 48 60
Qg - Total Gate Charge (nC)
2nd line
Gate Charge
0.6
-50
10
-25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
Axis Title
100 10000
10
1
0.1
0.01
TJ = 150 °C
TJ = 25 °C
1000
100
0.001
0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
2nd line
10
1.2
Source-Drain Diode Forward Voltage
Axis Title
0.6 10000
0.4 ID = 250 μA
1000
0.2
ID = 5 mA
0
100
-0.2
-0.4
-50 -25
10
0 25 50 75 100 125 150
TJ - Temperature (°C)
2nd line
Threshold Voltage
0.05
Axis Title
10000
0.04
ID = 10 A
0.03
1000
0.02
0.01
TJ = 125 °C
100
TJ = 25 °C
0 10
012345
VGS - Gate-to-Source Voltage (V)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Axis Title
120 10000
100
80 1000
60
40 100
20
0
0.001
0.01 0.1
Time (s)
2nd line
1
10
10
Single Pulse Power, Junction-to-Ambient
S16-1520-Rev. A, 01-Aug-16
4
Document Number: 67807
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Si7111EDN 전자부품, 판매, 대치품
www.vishay.com
Legal Disclaimer Notice
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Disclaimer
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Revision: 13-Jun-16
1 Document Number: 91000

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