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RJH60D7BDPQ-E0 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 RJH60D7BDPQ-E0
기능 IGBT
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RJH60D7BDPQ-E0 데이터시트 및 RJH60D7BDPQ-E0 PDF

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RJH60D7BDPQ-E0 pdf, 반도체, 판매, 대치품
RJH60D7BDPQ-E0
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Tc = 25°C
Pulse Test
4
IC = 50 A
90 A
3
2
1
4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Typical Transfer Characteristics
200
Tc = 25°C
160
150°C
120
80
40
VCE = 10 V
Pulse Test
0
0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
8
6 IC = 10 mA
4
1 mA
2
VCE = 10 V
Pulse Test
0
25 0 25
50
75 100 125 150
Case Temparature Tc (°C)
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Tc = 150°C
Pulse Test
4
IC = 50 A
90 A
3
2
1
4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
2.4
VGE = 15 V
2.2 Pulse Test
2.0 IC = 90 A
1.8
50 A
1.6
25 A
1.4
1.2
25 0 25 50 75 100 125 150
Case Temparature Tc (°C)
Frequency Characteristics (Typical)
30
25
0
Collector current wave
20 (Square wave)
15
10
5 Tj = 12C, Tc = 90°C
VCE = 400 V, VGE = 15 V
Rg = 5 Ω, duty = 50%
0
1 10 100
Frequency f (kHz)
1000
R07DS0795EJ0300 Rev.3.00
Jul 20, 2016
Page 4 of 9

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RJH60D7BDPQ-E0 전자부품, 판매, 대치품
RJH60D7BDPQ-E0
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
10
Tc = 25°C
Preliminary
1 D=1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
1 shot pulse
0.01
100 μ
1m
10 m
θj – c(t) = γs (t) • θj – c
θj – c = 0.42°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
100 m
1
10 100
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
10
Tc = 25°C
D=1
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
1 shot pulse
0.01
100 μ
1m
θj – c(t) = γs (t) • θj – c
θj – c = 1.1°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
10 m
100 m
1
Pulse Width PW (s)
10 100
R07DS0795EJ0300 Rev.3.00
Jul 20, 2016
Page 7 of 9

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부품번호상세설명 및 기능제조사
RJH60D7BDPQ-E0

The functions of this components is a IGBT.

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