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FGA25N120ANTD_F109 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 FGA25N120ANTD_F109
기능 25A NPT Trench IGBT
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FGA25N120ANTD_F109 데이터시트 및 FGA25N120ANTD_F109 PDF

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FGA25N120ANTD_F109 pdf, 반도체, 판매, 대치품
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
180 TC = 25C
160
140
20V 15V 12V
17V
10V
120
100 9V
80
60 8V
40
20
0
0
7V
VGE = 6V
2468
Collector-Emitter Voltage, VCE [V]
10
Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.0
Common Emitter
VGE = 15V
2.5
40A
2.0 IC = 25A
1.5
25
50 75 100
Case Temperature, TC [C]
125
Figure 5. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25C
16
12
8
40A
25A
4
IC = 12.5A
0
0 4 8 12 16
Gate-Emitter Voltage, VGE [V]
20
Figure 2. Typical Saturation Voltage
Characteristics
120
Common Emitter
100
VGE = 15V
TC = 25C
TC = 125C
80
60
40
20
0
01234
Collector-Emitter Voltage, VCE [V]
Figure 4. Saturation Voltage vs. VGE
5
20
Common Emitter
TC = -40C
16
12
8
40A
4 25A
IC = 12.5A
0
0 4 8 12 16
Gate-Emitter Voltage, VGE [V]
Figure 6. Saturation Voltage vs. VGE
20
20
Common Emitter
TC = 125C
16
12
8
40A
25A
4
IC = 12.5A
0
048
12 16
Gate-Emitter Voltage, VGE [V]
20
©2006 Fairchild Semiconductor Corporation
FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0
4
www.fairchildsemi.com

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FGA25N120ANTD_F109 전자부품, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 18. Forward Characteristics
Figure 19. Reverse Recovery Current
50 30
10
TJ = 125C
1 TJ = 25C
25 di/dt = 200A/s
20
15
di/dt = 100A/s
10
0.1
0.0
TC = 125C
TC = 25C
0.4 0.8 1.2 1.6 2.0
Forward Voltage , VF [V]
Figure 20. Stored Charge
5
0
5 10 15 20
Forward Current , IF [A]
Figure 21. Reverse Recovery Time
4000
300
3000
2000
1000
di/dt = 200A/s
di/dt = 100A/s
di/dt = 100A/s
200
di/dt = 200A/s
100
25
0
5 10 15 20 25
Forward Current , IF [A]
0
5 10 15 20 25
Forward Current , IF [A]
©2006 Fairchild Semiconductor Corporation
FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0
7
www.fairchildsemi.com

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FGA25N120ANTD_F109

The functions of this components is a 25A NPT Trench IGBT.

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