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IRF840A 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 IRF840A
기능 N-Channel Power MOSFET
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IRF840A 데이터시트 및 IRF840A PDF

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IRF840A pdf, 반도체, 판매, 대치품
SEMICONDUCTOR
IRF840 Series RRooHHSS
Nell High Power Products
Fig.5 Typical capacitance vs. Drain-to-Source
voltage
2500
2000
VGS = 0V, f =1MHz
Ciss = Cgs +Cgd (Cds = shorted )
Crss = Cgd
Coss = Cds +Cgd
1500
Ciss
1000
500
0
100
Coss
Crss
101
Drain-to-Source voltage, VDS (V)
Fig.6 Typical gate charge vs. Drain-to-Source
voltage
20
lD = 8A
16
12
VDS=400V
VDS=250V
VDS=100V
8
4
For test circuit
see figure 13
0
0 15 30 45 60 75
Total gate charge, QG (nC)
Fig.7 Typical Source-Drain diode forward
voltage
TJ = 15 0°C
101
TJ = 25 °C
VGS = 0V
100
0.4 0.6 0.8 1.0 1.2 1.4
Source-to-Drain voltage, VSD (V)
Fig.8 Maximum safe operating area
102
10
Operation in This Area is Limited by RDS(ON)
10µs
100µs
1
0.1
0.1
1ms
Note:
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
10ms
1 101 102 103
104
Drain-to-Source voltage, VDS (V)
Fig.9 Maximum drain current vs.
Case temperature
8
6
4
2
www.nellsemi.com
0
25 50 75 100 125 150
Case temperature, TC (°C)
Page 4 of 7

4페이지

IRF840A 전자부품, 판매, 대치품
SEMICONDUCTOR
IRF840 Series RRooHHSS
Nell High Power Products
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
4.06 (0.160)
3.56 (0.140)
PIN
123
16.13 (0.635)
15.87 (0.625)
3.68 (0.145)
3.43 (0.135)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
14.22 (0.560)
13.46 (0.530)
0.56 (0.022)
0.36 (0.014)
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
15.32 (0.603)
14.55 (0.573)
2.79 (0.110)
2.54 (0.100)
All dimensions in millimeters(inches)
D (Drain)
G
(Gate)
S (Source)
www.nellsemi.com
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