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2SK3418 데이터시트 PDF


2SK3418 Datasheet : 부품 기능 및 핀배열 알아보기

부품번호 2SK3418
기능 Silicon N Channel MOS FET
제조업체 Renesas
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2SK3418 데이터시트 및 2SK3418 PDF

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2SK3418 pdf, 반도체, 판매, 대치품
2SK3418
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
12 ID = 50 A
8 4V
10, 20 A
4
10, 20, 50 A
VGS = 10 V
0
–50 0
50 100 150 200
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
200
100
50
20
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
100
ID = 85 A
20
80 VGS 16
60
40
V DS
VDS = 50 V
25 V
10 V
12
8
20 VDS = 50 V
25 V
4
10 V
0
0 80 160 240 320 400
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
500
V DS = 10 V
200 Pulse Test
100
50 Tc = – 25°C
20
10
5
2
1
0.5
0.1
0.3
25°C
75°C
1 3 10 30 100
Drain Current ID (A)
30000
10000
3000
1000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
300 Crss
100
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
1000
500
Switching Characteristics
t d(off)
tf
200
100 tr
50
td(on)
20 VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
10
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current ID (A)
Rev.2.00 Sep. 10, 2004 page 4 of 7

4페이지

2SK3418 전자부품, 판매, 대치품
2SK3418
Package Dimensions
11.5 Max
10.16 ± 0.2
9.5
8.0
φ
3.6
+0.1
–0.08
As of January, 2003
Unit: mm
4.44 ± 0.2
1.26 ± 0.15
2.54 ± 0.5
1.5 Max
0.76 ± 0.1
2.54 ± 0.5
2.7 Max
0.5 ± 0.1
Package Code
JEDEC
JEITA
Mass (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Ordering Information
Part Name
Quantity
Shipping Container
2SK3418-E
50 pcs
sack
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep. 10, 2004 page 7 of 7

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