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EM6J1 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 EM6J1
기능 1.2V Drive Pch MOSFET
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EM6J1 데이터시트 및 EM6J1 PDF

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EM6J1 pdf, 반도체, 판매, 대치품
EM6J1
1.0
VDS= -10V
Pulsed
Ta=-25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
0.01
0.1
1
DRAIN-CURRENT : -ID[A]
Fig.10 Forward Transfer Admittance
vs. Drain Current
1
VGS=0V
Pulsed
0.1 Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0
0.5 1 1.5
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
Data Sheet
5 Ta=25°C
Pulsed
4
ID= -0.2A
3
ID= -0.01A
2
1
0
0 2 4 6 8 10
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
100
td(off)
tf
Ta=25°C
VDD= -10V
VGS=-4.5V
RG=10
Pulsed
10
1
0.01
tr
td(on)
0.1
DRAIN-CURRENT : -ID[A]
Fig.13 Switching Characteristics
1
zMeasurement circuit
VGS
ID
D.U.T.
RG
VDS
RL
VDD
Fig.1-1 Switching Time Measurement Circuit
5
4
3
2
Ta=25°C
VDD= -10V
1 ID= -0.2A
RG=10
Pulsed
0
0 0.5 1 1.5
TOTAL GATE CHARGE : Qg [nC]
Fig.14 Dynamic Input Characteristics
1000
Ta=25°C
f=1MHz
VGS=0V
100
Ciss
10
Coss
Crss
1
0.01
0.1
1
10 100
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.15 Typical Capacitance
vs. Drain-Source Voltage
VGS Pulse Width
10%
50%
50%
90%
10%
VDS
td(on)
90%
tr
ton
10%
90%
td(off)
tf
toff
Fig.1-2 Switching Waveforms
VGS
IG(Const.)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.2-1 Gate Charge Measurement Circuit
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate Charge Waveform
zNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
4/4
2009.05 - Rev.A

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부품번호상세설명 및 기능제조사
EM6J1

The functions of this components is a 1.2V Drive Pch MOSFET.

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