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PDF SMBJ9.0 Data sheet ( Hoja de datos )
| Número de pieza | SMBJ9.0 | |
| Descripción | TVS Diode ( Rectifier ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SMBJ9.0 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Suppressors
DO-214AA (SMB J-Bend)
PRIMARY CHARACTERISTICS
VWM
PPPM
IFSM (uni-directional only)
TJ max.
5.0 V to 188 V
600 W
100 A
150 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use C or CA suffix
(e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1)
Peak pulse current with a 10/1000 µs waveform (1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
SYMBOL
PPPM
IPPM
IFSM
TJ, TSTG
VALUE
600
See next table
100
- 55 to + 150
UNIT
W
A
A
°C
Document Number: 88392 For technical questions within your region, please contact one of the following:
Revision: 04-Sep-07
www.vishay.com
1
1 page  
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
100 200
8.3 ms Single Half Sine-Wave
Uni-Directional Only
100
10
1.0
0.1
0.001
0.01 0.1 1.0 10
tp - Pulse Duration (s)
100
1000
Figure 5. Typical Transient Thermal Impedance
10
1
10
Number of Cycles at 60 Hz
100
Figure 6. Maximum Non-Repetitive Peak Forward Surge Current
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB-J-Bend)
Cathode Band
Mounting Pad Layout
0.085 (2.159)
MAX.
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18)
MIN.
0.096 (2.44)
0.084 (2.13)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.220 REF.
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008 (0.2)
0 (0)
Document Number: 88392 For technical questions within your region, please contact one of the following:
Revision: 04-Sep-07
www.vishay.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SMBJ9.0.PDF ] | |
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