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SMBJ9.0A 데이터시트 PDF




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기능 TVS Diode ( Rectifier )
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SMBJ9.0A 데이터시트, 핀배열, 회로
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Suppressors
DO-214AA (SMB J-Bend)
PRIMARY CHARACTERISTICS
VWM
PPPM
IFSM (uni-directional only)
TJ max.
5.0 V to 188 V
600 W
100 A
150 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use C or CA suffix
(e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1)
Peak pulse current with a 10/1000 µs waveform (1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
SYMBOL
PPPM
IPPM
IFSM
TJ, TSTG
VALUE
600
See next table
100
- 55 to + 150
UNIT
W
A
A
°C
Document Number: 88392 For technical questions within your region, please contact one of the following:
Revision: 04-Sep-07
www.vishay.com
1




SMBJ9.0A pdf, 반도체, 판매, 대치품
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance, junction to ambient (1)
RθJA
Typical thermal resistance, junction to lead
RθJL
Note:
(1) Mounted on minimum recommended pad layout
VALUE
100
20
UNIT
°C/W
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
SMBJ5.0A-E3/52
0.096
52
SMBJ5.0A-E3/5B
SMBJ5.0AHE3/52 (1)
SMBJ5.0AHE3/5B (1)
0.096
0.096
0.096
5B
52
5B
Note:
(1) Automotive grade AEC Q101 qualified
BASE QUANTITY
750
3200
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
100
10
150
tr = 10 µs
TJ = 25 °C
Pulse Width (td)
is defined as the Point
100
Peak Value
IPPM
where the Peak Current
decays to 50 % of IPPM
1
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
1.0 µs 10 µs 100 µs 1.0 ms
td - Pulse Width (s)
10 ms
Figure 1. Peak Pulse Power Rating Curve
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
0 1.0 2.0 3.0
t - Time (ms)
Figure 3. Pulse Waveform
4.0
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TJ - Initial Temperature (°C)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
6000
1000
Measured at
Zero Bias
100 VR, Measured at Stand-Off
Voltage VWM
10
1
Uni-Directional
Bi-Directional
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10 100 200
VWM - Reverse Stand-Off Voltage (V)
Figure 4. Typical Junction Capacitance
www.vishay.com
4
For technical questions within your region, please contact one of the following: Document Number: 88392
Revision: 04-Sep-07

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