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TLP2451A PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 TLP2451A
기능 Photocouplers
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TLP2451A 데이터시트, 핀배열, 회로
Photocouplers GaAℓAs Infrared LED & Photo IC
TLP2451A
TLP2451A
1. Applications
• Industrial Inverters
• MOSFET Gate Drivers
• IGBT Gate Drivers
• Induction Cooktop and Home Appliances
2. General
The TLP2451A is a photocoupler in a SO8 package that consists of a GaAℓAs infrared light-emitting diode (LED)
optically coupled to an integrated high-gain, high-speed photodetector IC chip. It provides guaranteed performance
and specifications at temperatures up to 125. The TLP2451A has an internal Faraday shield that provides a
guaranteed Common-mode transient immunity of ±20 kV/µs. It has a totem-pole output that can both sink and
source current. The TLP2451A is ideal for IBGT and power MOSFET gate drive.
3. Features
(1) Output peak current: ±0.6 A (max)
(2) Operating temperature: -40 to 125
(3) Supply current: 2 mA (max)
(4) Supply voltage: 10 to 30 V
(5) Threshold input current: 5 mA (max)
(6) Propagation delay time: 500 ns (max)
(7) Common-mode transient immunity: ±20 kV/µs (min)
(8) Isolation voltage: 3750 Vrms (min)
(9) Safety standards
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN60747-5-5 (Note 1)
Note 1: When an EN60747-5-5 approved type is needed, please designate the Option (V4).
©2016 Toshiba Corporation
1
Start of commercial production
2011-09
2016-02-10
Rev.2.0




TLP2451A pdf, 반도체, 판매, 대치품
TLP2451A
9. Electrical Characteristics (Note)
(Unless otherwise specified, Ta = -40 to 125)
Characteristics
Symbol Note
Test
Circuit
Test Condition
Min Typ. Max Unit
Input forward voltage
VF
IF = 10 mA, Ta = 25
1.45 1.55 1.7
V
Input forward voltage
temperature coefficient
VF/Ta
IF = 10 mA
-2.0 mV/
Input reverse current
IR
VR = 5 V, Ta = 25
  10 µA
Input capacitance
Ct
V = 0 V, f = 1 MHz, Ta = 25  60 pF
Peak high-level output current IOPH
Peak low-level output current IOPL
High-level output voltage
Low-level output voltage
High-level supply current
VOH
VOL
ICCH
(Note 1)
(Note 1)
Fig.
12.1.1
Fig.
12.1.2
Fig.
12.1.3
Fig.
12.1.4
Fig.
12.1.5
IF = 5 mA, VCC = 15 V,
V8-6 = 4 V
IF = 5 mA, VCC = 15 V,
V8-6 = 10 V
IF = 0 mA, VCC = 15 V,
V6-5 = 2 V
IF = 0 mA, VCC = 15 V,
V6-5 = 10 V
IF = 5 mA, VCC = 10 V,
IO = -100 mA
VF = 0.8 V, VCC = 10 V,
IO = 100 mA
IF = 10 mA, VCC = 10 to 30 V,
VO = Open
0.2
0.4
6.0
-0.4 -0.2
-0.4
0.5

8.5
0.35 1.0
1.1 2.0
A
V
mA
Low-level supply current
ICCL
Fig. IF = 0 mA, VCC = 10 to 30 V,
1.1
2.0
12.1.6 VO = Open
Threshold input current (L/H) IFLH
VCC = 15 V, VO > 1 V
1.2
5
Threshold input voltage (H/L) VFHL
VCC = 15 V, VO < 1 V
0.8   V
Supply voltage
VCC
10 30
Note: All typical values are at Ta = 25.
Note: This device is designed for low power consumption, making it more sensitive to ESD than its predecessors.
Extra care should be taken in the design of circuitry and pc board implementation to avoid ESD problems.
Note 1: IO application time 50 µs, single pulse.
10. Isolation Characteristics (Unless otherwise specified, Ta = 25)
Characteristics
Symbol Note
Test Conditions
Min Typ. Max Unit
Total capacitance (input to
output)
CS (Note 1) VS = 0 V, f = 1 MHz
0.8 pF
Isolation resistance
RS (Note 1) VS = 500 V, R.H. 60%
1
× 1012
1014
Isolation voltage
BVS AC, 60 s
AC, 1 s, in oil
3750
10000
Vrms
DC, 60 s, in oil
10000
Vdc
Note 1: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7
and 8 are shorted together.
©2016 Toshiba Corporation
4
2016-02-10
Rev.2.0

4페이지










TLP2451A 전자부품, 판매, 대치품
TLP2451A
13. Soldering and Storage
13.1. Precautions for Soldering
The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective
of whether a soldering iron or a reflow soldering method is used.
• When using soldering reflow.
The soldering temperature profile is based on the package surface temperature.
(See the figure shown below, which is based on the package surface temperature.)
Reflow soldering must be performed once or twice.
The mounting should be completed with the interval from the first to the last mountings being 2 weeks.
Fig. 13.1.1 An example of a temperature profile Fig. 13.1.2 An example of a temperature profile
when Sn-Pb eutectic solder is used
when lead(Pb)-free solder is used
• When using soldering flow (Applicable to both eutectic solder and Lead(Pb)-Free solder)
Preheat the device at a temperature of 150 (package surface temperature) for 60 to 120 seconds.
Mounting condition of 260 within 10 seconds is recommended.
Flow soldering must be performed once.
• When using soldering Iron
Complete soldering within 10 seconds for lead temperature not exceeding 260 or within 3 seconds not
exceeding 350
Heating by soldering iron must be done only once per lead.
13.2. Precautions for General Storage
• Avoid storage locations where devices may be exposed to moisture or direct sunlight.
• Follow the precautions printed on the packing label of the device for transportation and storage.
• Keep the storage location temperature and humidity within a range of 5to 35and 45% to 75%,
respectively.
• Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty
conditions.
• Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during
storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the
solderability of the leads.
• When restoring devices after removal from their packing, use anti-static containers.
• Do not allow loads to be applied directly to devices while they are in storage.
• If devices have been stored for more than two years under normal storage conditions, it is recommended
that you check the leads for ease of soldering prior to use.
©2016 Toshiba Corporation
7
2016-02-10
Rev.2.0

7페이지



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