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PDF K2836 Data sheet ( Hoja de datos )
| Número de pieza | K2836 | |
| Descripción | MOSFET ( Transistor ) - 2SK2836 | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K2836 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK2836
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2836
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 6.4 Ω (typ.)
l High forward transfer admittance : |Yfs| = 0.85 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDSS = 600 V)
l Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(Note 2)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
600
±30
1
2
2.5
56
1
0.25
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
—
JEITA
—
TOSHIBA
2-7H1B
Weight: 0.12 g (typ.)
Marking
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient
Rth (ch−a)
50 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: VDD = 90 V, Tch = 25°C (initial), L = 100 mH, RG = 25 Ω, IAR = 1 A
Note 4: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-09-04
1 page  
2SK2836
RG = 25 W
VDD = 90 V, L = 100 mH
EAS
=
1
2
× L × I2
× çæ
è
BVDSS
BVDSS - VDD
÷ö
ø
5 2002-09-04
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K2836.PDF ] | |
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