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13N60AF PDF 데이터시트 ( Data , Function )

부품번호 13N60AF 기능
기능 N-Channel Power MOSFET
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13N60AF 데이터시트, 핀배열, 회로
SEMICONDUCTOR
13N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
13A, 600Volts
DESCRIPTION
The Nell 13N60 is a three-terminal silicon
device with current conduction capability of
13A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies. DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 0.26Ω @ VGS = 10V
Ultra low gate charge(40nC max.)
Low reverse transfer capacitance
(CRSS = 3pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-220AB
(13N60A)
GDS
TO-220F
(13N60AF)
D (Drain)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
13
600
0.26 @ VGS = 10V
40
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
lAR=4.3A,RGS=50Ω, VGS=10V
EAS
dv/dt
PD
Single pulse avalanche energy (Note 2)
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt (Note 3)
Total power dissipation (Derate above 25°C)
lAS=4.3A
TC=25°C
TO-220AB
TO-220F
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
VALUE
600
600
±30
13
8.2
39
4.3
1.2
235
100
20
116(0.93)
34(0.27)
-55 to 150
-55 to 150
300
10 (1.1)
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS=4.3A, VDD=50V, RGS=25Ω, starting TJ = 25 °C.
3.ISD ≤ 13A, di/dt ≤ 200A/µs, VDD V(BR)DSS, starting TJ = 25°C.
www.nellsemi.com
Page 1 of 8
UNIT
V
A
mJ
V /ns
W(W/°C)
ºC
lbf.in (N.m)




13N60AF pdf, 반도체, 판매, 대치품
SEMICONDUCTOR
TEST CIRCUITS AND WAVEFORMS (Cont.)
13N60 Series RRooHHSS
Nell High Power Products
Fig.2A Switching test circuit
VDS
VGS
RG
10V
Pulse Width ≤ 1µs
Duty Factor ≤ 0.1%
RL
D.U.T.
VDD
Fig.2B Switching Waveforms
VDS
90%
10%
VGS
td(ON)
tR
td(OFF)
tF
Fig.3A Gate charge test circuit
Fig.3B Gate charge waveform
Same Type as
12V 50kΩ D.U.T.
0.2µF
0.3µF
VDS
VGS
3mA
D.U.T.
VGS
10V
QGS
QG
QGD
Charge
Fig.4A Unclamped lnductive switching test circuit
VDS
L
10V
RG
tp
D.U.T.
VDD
Fig.4B Unclamped lnductive switching
waveforms
BVDSS
lAS
VDD
lD(t)
tp
VDS(t)
Time
www.nellsemi.com
Page 4 of 8

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13N60AF 전자부품, 판매, 대치품
SEMICONDUCTOR
Fig.9 Breakdown voltage variation
vs. temperature
1.2
1.1
1.0
0.9 Notes:
1. VGS=0V
2. ID=1mA
0.8
-100 -50 0 50 100 150 200
Junction temperature, TJ (°C)
Fig.11 Maximum drain current vs.case
temperature
15
12
9
6
3
0
25
50 75 100 125
Case Temperature, TC (°C)
150
13N60 Series RRooHHSS
Nell High Power Products
Fig.10 On-resistance variation vs.
temperature
3.0
2.5
2.0
1.5
1.0
Notes:
0.5 1. VGS=10V
2. ID=6.5A
0.0
-100 -50
0
50 100 150 200
Drain-to-Source voltage, VDS (V)
www.nellsemi.com
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관련 데이터시트

부품번호상세설명 및 기능제조사
13N60A

N-Channel Power MOSFET

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13N60AF

N-Channel Power MOSFET

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