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PDF CSIC10-1200 Data sheet ( Hoja de datos )
| Número de pieza | CSIC10-1200 | |
| Descripción | Schottky Rectifier ( Diode ) | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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CSIC10-1200
SILICON CARBIDE
SCHOTTKY RECTIFIER
10 AMP, 1200 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CSIC10-1200 is a
silicon carbide Schottky rectifier designed for high
frequency systems where energy efficiency and thermal
performance are critical design elements.
MARKING: FULL PART NUMBER
TO-220-2 CASE
FEATURES:
• Positive temperature coefficient
• High reverse voltage
• High operating temperaure (175°C MAX)
• Stable switching over temperature extremes
APPLICATIONS:
• Power inverters
• Industrial motor drives
• Switch-mode power supplies
• Power factor correction
• Over-current protection
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
Peak Reverse Surge Voltage
VRSM
DC Blocking Voltage
VR
Average Rectified Forward Current (TC=130°C)
IO
Continuous Forward Current (TC=130°C)
IF
Peak Forward Surge Current, tp=8.3ms
IFSM
Power Dissipation
PD
Power Dissipation (TC=130°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJC
1200
1200
1200
10
14
50
150
42
-55 to +175
1.0
ELECTRICAL CHARACTERISTICS: (TJ=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP
IR VR=1200V
60
IR VR=1200V, TJ=175°C
0.09
VF IF=10A
1.55
VF IF=10A, TJ=175°C
2.3
QC
VR=800V, IF=10A, di/dt=750A/μs
54
CJ VR=1.0V, f=1.0MHz
477
CJ VR=300V, f=1.0MHz
50
CJ VR=600V, f=1.0MHz
41
MAX
400
1.0
1.8
3.0
UNITS
V
V
V
A
A
A
W
W
°C
°C/W
UNIT
μA
mA
V
V
nC
pF
pF
pF
R2 (4-February 2013)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CSIC10-1200.PDF ] | |
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