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부품번호 | RGT40NS65D 기능 |
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기능 | Field Stop Trench IGBT | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 11 페이지수
RGT40NS65D
650V 20A Field Stop Trench IGBT
Data Sheet
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
20A
1.65V
161W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss
3) Short Circuit Withstand Time 5μs
4) Built in Very Fast & Soft Recovery FRD
(RFN - Series)
lOutline
LPDS (TO-263S)
(2)
(1)
(3)
lInner Circuit
(2)
*1
(1)
(3)
(1) Gate
(2) Collector
(3) Emitter
*1 Built in FRD
5) Pb - free Lead Plating ; RoHS Compliant
lApplications
General Inverter
lPackaging Specifications
Packaging
Reel Size (mm)
Taping
330
UPS
Power Conditioner
Tape Width (mm)
Type
Basic Ordering Unit (pcs)
24
1,000
Welder
Taping Code
TL
Marking
RGT40NS65D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
Gate - Emitter Voltage
Collector Current
Pulsed Collector Current
TC = 25°C
TC = 100°C
Diode Forward Current
Diode Pulsed Forward Current
TC = 25°C
TC = 100°C
Power Dissipation
Operating Junction Temperature
TC = 25°C
TC = 100°C
Storage Temperature
*1 Pulse width limited by Tjmax.
VCES
VGES
IC
IC
ICP*1
IF
IF
IFP*1
PD
PD
Tj
Tstg
650
30
40
20
60
35
20
60
161
70
-40 to +175
-55 to +175
V
V
A
A
A
A
A
A
W
W
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
2014.05 - Rev.A
RGT40NS65D
Data Sheet
lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Values
Typ.
Max.
IF = 20A
Diode Forward Voltage
VF Tj = 25°C
- 1.45 1.9
Tj = 175°C
- 1.25 -
Unit
V
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery
Charge
trr
IF = 20A
VCC = 400V
Irr diF/dt = 200A/μs
Tj = 25°C
Qrr
- 58 - ns
- 6.3 -
A
- 0.20 -
μC
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery
Charge
trr
IF = 20A
VCC = 400V
Irr diF/dt = 200A/μs
Tj = 175°C
Qrr
- 256 -
ns
- 10.4 -
A
- 1.35 -
μC
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
4/11
2014.05 - Rev.A
4페이지 RGT40NS65D
lElectrical Characteristic Curves
Data Sheet
Fig.9 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
20
Tj= 25ºC
Fig.10 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
20
Tj= 175ºC
15 IC= 40A
10 IC= 20A
IC= 10A
5
15
IC= 40A
10 IC= 20A
IC= 10A
5
0
5 10 15 20
Gate To Emitter Voltage : VGE [V]
0
5 10 15 20
Gate To Emitter Voltage : VGE [V]
Fig.11 Typical Switching Time
vs. Collector Current
1000
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
100
tf
td(off)
10
0
td(on)
tr
10 20 30
Collector Current : IC [A]
40
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
VCC=400V, IC=20A
VGE=15V, Tj=175ºC
Inductive load
100
tf
td(off)
tr
td(on)
10
0
10 20 30 40
Gate Resistance : RG [Ω]
50
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
7/11
2014.05 - Rev.A
7페이지 | |||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
RGT40NS65D | Field Stop Trench IGBT | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |