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부품번호 | RGTH00TS65D 기능 |
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기능 | Field Stop Trench IGBT | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 11 페이지수
RGTH00TS65D
650V 50A Field Stop Trench IGBT
Data Sheet
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
50A
1.6V
277W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) High Speed Switching
3) Low Switching Loss & Soft Switching
4) Built in Very Fast & Soft Recovery FRD
(RFN - Series)
lOutline
TO-247N
lInner Circuit
(1)(2)(3)
(2)
*1
(1)
(3)
(1) Gate
(2) Collector
(3) Emitter
*1 Built in FRD
5) Pb - free Lead Plating ; RoHS Compliant
lApplications
PFC
lPackaging Specifications
Packaging
Reel Size (mm)
Tube
-
UPS
Power Conditioner
Tape Width (mm)
Type
Basic Ordering Unit (pcs)
-
450
IH
Taping Code
C11
Marking
RGTH00TS65D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
Gate - Emitter Voltage
Collector Current
Pulsed Collector Current
TC = 25°C
TC = 100°C
Diode Forward Current
Diode Pulsed Forward Current
TC = 25°C
TC = 100°C
Power Dissipation
Operating Junction Temperature
TC = 25°C
TC = 100°C
Storage Temperature
*1 Pulse width limited by Tjmax.
VCES
VGES
IC
IC
ICP*1
IF
IF
IFP*1
PD
PD
Tj
Tstg
650
30
85
50
200
50
30
200
277
138
-40 to +175
-55 to +175
V
V
A
A
A
A
A
A
W
W
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
2014.05 - Rev.B
RGTH00TS65D
Data Sheet
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Min. Typ.
Max.
IF = 30A
Diode Forward Voltage
VF Tj = 25°C
- 1.45 2.0
Tj = 175°C
- 1.25 -
Unit
V
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery
Charge
trr
IF = 30A
VCC = 400V
Irr diF/dt = 200A/μs
Tj = 25°C
Qrr
- 54 - ns
- 7.4 -
A
- 0.22 -
μC
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery
Charge
trr
IF = 30A
VCC = 400V
Irr diF/dt = 200A/μs
Tj = 175°C
Qrr
- 225 -
ns
- 12.8 -
A
- 1.60 -
μC
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
4/11
2014.05 - Rev.B
4페이지 RGTH00TS65D
lElectrical Characteristic Curves
Data Sheet
Fig.9 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
20
Tj= 25ºC
Fig.10 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
20
Tj= 175ºC
15 IC= 100A
10 IC= 50A
IC= 25A
5
15
IC= 100A
10 IC= 50A
IC= 25A
5
0
5 10 15 20
Gate To Emitter Voltage : VGE [V]
0
5 10 15 20
Gate To Emitter Voltage : VGE [V]
Fig.11 Typical Switching Time
vs. Collector Current
1000
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
td(off)
100 tf
td(on)
10
0
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
tr Inductive load
10 20 30 40 50 60 70 80 90 100
Collector Current : IC [A]
td(off)
100 tf
tr
td(on)
10
0
10
VCC=400V, IC=50A
VGE=15V, Tj=175ºC
Inductive load
20 30 40 50
Gate Resistance : RG [Ω]
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
7/11
2014.05 - Rev.B
7페이지 | |||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
RGTH00TS65 | Field Stop Trench IGBT | ROHM Semiconductor |
RGTH00TS65D | Field Stop Trench IGBT | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |