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PDF RTQ045N03FRA Data sheet ( Hoja de datos )
| Número de pieza | RTQ045N03FRA | |
| Descripción | 2.5V Drive Nch MOS FET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistors
2.5V Drive Nch MOS FET
RTQ045N0033FRA
RTQR0T4Q50N4053NF0R3A
AEC-Q101 Qualified
zStructure
Silicon N-channel
MOS FET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6) .
zApplication
Power switching, DC / DC converter.
zExternal dimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : QM
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RRTTQQ00445NN0033FRA
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
30
12
±4.5
±18
1.0
4.0
1.25
150
−55~+150
Unit
V
V
A
A
A
A
W
°C
°C
zEquivalent circuit
(6) (5) (4)
(6) (5) (4)
∗2
(1) (2) (3)
∗1
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol
Rth (ch-a) ∗
Limits
100
Unit
°C / W
Rev.C
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet RTQ045N03FRA.PDF ] | |
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