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PDF SiSS27DN Data sheet ( Hoja de datos )
| Número de pieza | SiSS27DN | |
| Descripción | P-Channel 30 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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P-Channel 30 V (D-S) MOSFET
SiSS27DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.0056 at VGS = - 10 V
- 30 0.0070 at VGS = - 6 V
0.0090 at VGS = - 4.5 V
ID (A)
- 50e
- 50e
- 50e
Qg (Typ.)
45 nC
PowerPAK 1212-8S
3.3 mm
3.3 mm
S
1
S
2
S
3
G
4
0.75 mm
FEATURES
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK®
Package with Small Size and Low 0.75 mm
Profile
• 100 % Rg and UIS Tested
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Notebook Computers and Mobile
Computing
- Adaptor Switch
- Load Switch
- DC/DC Converter
- Power Management
G
S
D
8
D
7
D
6
D
5
Bottom View
Ordering Information:
SiSS27DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 100 µs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)c, d
Limit
- 30
± 20
- 50e
- 50e
- 23a, b
- 18.5a, b
- 200
- 47.5
- 4a, b
- 25
31
57
36
4.8a, b
3a, b
- 50 to 150
260
Unit
V
A
mJ
W
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 62847
For technical questions, contact: [email protected]
www.vishay.com
S13-1161-Rev. A, 13-May-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
SiSS27DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
80
60
40 Package Limited
20
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
70
60
50
40
30
20
10
0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Case
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Single Pulse
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 63 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
Document Number: 62847
For technical questions, contact: [email protected]
www.vishay.com
S13-1161-Rev. A, 13-May-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SiSS27DN.PDF ] | |
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