|
|
|
부품번호 | RGTH60TS65 기능 |
|
|
기능 | Field Stop Trench IGBT | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 9 페이지수
RGTH60TS65
650V 30A Field Stop Trench IGBT
Data Sheet
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
30A
1.6V
194W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) High Speed Switching
3) Low Switching Loss & Soft Switching
4) Pb - free Lead Plating ; RoHS Compliant
lOutline
TO-247N
lInner Circuit
(2)
(1)(2)(3)
(1)
(1) Gate
(2) Collector
(3) Emitter
(3)
lApplications
PFC
lPackaging Specifications
Packaging
Tube
UPS
Reel Size (mm)
-
Power Conditioner
IH
Tape Width (mm)
Type
Basic Ordering Unit (pcs)
-
450
Taping Code
C11
Marking
RGTH60TS65
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
Gate - Emitter Voltage
Collector Current
Pulsed Collector Current
TC = 25°C
TC = 100°C
Power Dissipation
Operating Junction Temperature
TC = 25°C
TC = 100°C
Storage Temperature
*1 Pulse width limited by Tjmax.
VCES
VGES
IC
IC
ICP*1
PD
PD
Tj
Tstg
650
30
58
30
120
194
97
-40 to +175
-55 to +175
V
V
A
A
A
W
W
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/9
2014.05 - Rev.B
RGTH60TS65
lElectrical Characteristic Curves
Data Sheet
Fig.1 Power Dissipation vs. Case Temperature
220
200
180
160
140
120
100
80
60
40
20
0
0
25 50 75 100 125 150 175
Case Temperature : Tc [ºC]
Fig.2 Collector Current vs. Case Temperature
70
60
50
40
30
20
10
Tj≦175ºC
VGE≧15V
0
0 25 50
75 100 125 150 175
Case Temperature : Tc [ºC]
Fig.3 Forward Bias Safe Operating Area
1000
100
10µs
10
100µs
1
0.1
0.01
1
TC= 25ºC
Single Pulse
10
100 1000
Collector To Emitter Voltage : VCE[V]
Fig.4 Reverse Bias Safe Operating Area
160
140
120
100
80
60
40
20 Tj≦175ºC
VGE=15V
0
0 200 400 600 800
Collector To Emitter Voltage : VCE[V]
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
4/9
2014.05 - Rev.B
4페이지 RGTH60TS65
lElectrical Characteristic Curves
Fig.13 Typical Switching Energy Losses
vs. Collector Current
10
Data Sheet
Fig.14 Typical Switching Energy Losses
vs. Gate Resistance
10
1
Eoff
0.1 Eon
0.01
0
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
10 20 30 40 50 60
Collector Current : IC [A]
1 Eoff
Eon
0.1
0.01
0
VCC=400V, IC=30A
VGE=15V, Tj=175ºC
Inductive load
10 20 30 40 50
Gate Resistance : RG [Ω]
Fig.15 Typical Capacitance
vs. Collector To Emitter Voltage
10000
Cies
1000
Coes
100
10 Cres
f=1MHz
VGE=0V
Tj=25ºC
1
0.01 0.1 1 10 100
Collector To Emitter Voltage : VCE[V]
Fig.16 Typical Gate Charge
15
10
5
VCC=300V
IC=30A
Tj=25ºC
0
0 10 20 30 40 50 60
Gate Charge : Qg [nC]
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
7/9
2014.05 - Rev.B
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ RGTH60TS65.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
RGTH60TS65 | Field Stop Trench IGBT | ROHM Semiconductor |
RGTH60TS65D | Field Stop Trench IGBT | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |