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부품번호 | JCS5N60C 기능 |
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기능 | N-CHANNEL MOSFET | ||
제조업체 | JILIN SINO-MICROELECTRONICS | ||
로고 | |||
N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
JCS5N60C
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 4.0 A
VDSS 600 V
Rdson(Vgs=10V) 2.5Ω
Qg 9nC
用途
高频开关电源
电子镇流器
LED 电源
APPLICATIONS
High frequency switching
mode power supply
Electronic ballast
LED power supply
产品特性
低栅极电荷
低 Crss (典型值 12pF)
开关速度快
产品全部经过雪崩测试
高抗 dv/dt 能力
RoHS 产品
FEATURES
Low gate charge
Low Crss (typical 12pF )
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
订货信息 ORDER MESSAGE
订货型号
印记
Order codes
Marking
JCS5N60VC-O-V-N-B JCS5N60V
JCS5N60RC-O-R-N-B JCS5N60R
JCS5N60RC-O-R-N-A JCS5N60R
JCS5N60CC-O-C-N-B JCS5N60C
JCS5N60FC-O-F-N-B JCS5N60F
封装
Package
IPAK
DPAK
DPAK
TO-220C
TO-220MF
无卤素
Halogen Free
否 NO
否 NO
否 NO
否 NO
否 NO
包装
Packaging
条管 Tube
条管 Tube
编带 Brede
条管 Tube
条管 Tube
器件重量
Device Weight
0.35 g(typ)
0.30 g(typ)
0.30 g(typ)
2.15 g(typ)
2.20 g(typ)
版本:201507A
1/12
R JCS5N60C
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
上升时间 Turn-On rise time
td(on)
tr
VDD=300V,ID=4A,RG=25Ω
(note 4,5)
- 30 50 ns
- 75 120 ns
延迟时间 Turn-Off delay time
td(off)
- 60 150 ns
下降时间 Turn-Off Fall time
tf
- 55 120 ns
栅极电荷总量 Total Gate Charge Qg
VDS =480V ,
- 9 14 nC
栅-源电荷 Gate-Source charge Qgs
栅-漏电荷 Gate-Drain charge Qgd
ID=4A
VGS =10V
- 2.9
(note 4,5) - 4.0
-
-
nC
nC
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS - - 4 A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM - - 16 A
正向压降
Drain-Source Diode Forward VSD VGS=0V, IS=4.0A
Voltage
- - 1.4 V
反向恢复时间
Reverse recovery time
trr VGS=0V, IS=4.0A
反向恢复电荷
Reverse recovery charge
Qrr dIF/dt=100A/μs (note 4)
热特性 THERMAL CHARACTERISTIC
- 330 -
- 2.67 -
ns
μC
项目
Parameter
最大
符号
单位
Max
Symbol
Unit
JCS5N60VC/RC JCS5N60CC JCS5N60FC
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
2.50
1.25 3.79 ℃/W
结到环境的热阻
Rth(j-A)
Thermal Resistance, Junction to Ambient
83
62.5 62.5 ℃/W
注释:
1:脉冲宽度由最高结温限制
2:L=48mH, IAS=4.0A, VDD=50V, RG=25 Ω,起始结
温 TJ=25℃
3:ISD ≤4.0A,di/dt ≤200A/μs,VDD≤BVDSS,起始结温
TJ=25℃
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
Notes:
1:Pulse width limited by maximum junction
temperature
2 :L=48mH, IAS=4.0A, VDD=50V, RG=25 Ω,Starting
TJ=25℃
3 : ISD ≤4.0A,di/dt ≤200A/μs,VDD≤BVDSS, Starting
TJ=25℃
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature
版本:201507A
4/12
4페이지 R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve
For JCS5N60VC/RC
JCS5N60C
Transient Thermal Response Curve
For JCS5N60CC
Transient Thermal Response Curve
For JCS5N60FC
版本:201507A
7/12
7페이지 | |||
구 성 | 총 12 페이지수 | ||
다운로드 | [ JCS5N60C.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
JCS5N60B | N-CHANNEL MOSFET | JILIN SINO-MICROELECTRONICS |
JCS5N60C | N-CHANNEL MOSFET | JILIN SINO-MICROELECTRONICS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |