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VS-HFA15TB60-N3 데이터시트 PDF




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부품번호 VS-HFA15TB60-N3 기능
기능 Ultrafast Soft Recovery Diode
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VS-HFA15TB60-N3 데이터시트, 핀배열, 회로
www.vishay.com
VS-HFA15TB60PbF, VS-HFA15TB60-N3
Vishay Semiconductors
HEXFRED®,
Ultrafast Soft Recovery Diode, 15 A
TO-220AC
Base
cathode
2
1
Cathode
3
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr typ.
TJ max.
Diode variation
TO-220AC
15 A
600 V
1.2 V
23 ns
150 °C
Single die
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Designed and qualified
JEDEC®-JESD47
according
to
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
Available
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA15TB60... is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 15 A continuous current, the
VS-HFA15TB60... is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the tb
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA15TB60... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
VR
IF
IFSM
IFRM
PD
TJ, TStg
TEST CONDITIONS
TC = 100 °C
TC = 25 °C
TC = 100 °C
VALUES
600
15
150
60
74
29
-55 to +150
UNITS
V
A
W
°C
Revision: 10-Jul-15
1 Document Number: 94053
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




VS-HFA15TB60-N3 pdf, 반도체, 판매, 대치품
www.vishay.com
VS-HFA15TB60PbF, VS-HFA15TB60-N3
Vishay Semiconductors
100
IF = 30 A
IF = 15 A
80 IF = 5 A
60
40
20 VR = 200 V
TJ = 125 °C
TJ = 25 °C
0
100
1000
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
800
700
VR = 200 V
TJ = 125 °C
TJ = 25 °C
600
500
IF = 30 A
400 IF = 15 A
IF = 5 A
300
200
100
0
100
dIF/dt (A/µs)
1000
Fig. 7 - Typical Stored Charge vs. dIF/dt
25
VR = 200 V
TJ = 125 °C
20 TJ = 25 °C
15 IF = 30 A
IF = 15 A
10 IF = 5 A
5
0
100
1000
dIF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dIF/dt
10 000
IF = 30 A
IF = 15 A
IF = 5 A
1000
100
100
VR = 200 V
TJ = 125 °C
TJ = 25 °C
1000
dIF/dt (A/µs)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
Revision: 10-Jul-15
4 Document Number: 94053
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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VS-HFA15TB60-N3 전자부품, 판매, 대치품
TO-220AC
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
(6)
E
E2 (7)
Q
(6) D
L3
D1
1 23
L4
A
ØP
0.014 M B A M
Detail B
(6) H1
(7)
A
C
L
B
Seating
plane
A
A1
e1
0.015 M B A M
cA
A2
E
H1
θ
Thermal pad
1 23
DD
CC
L1
D2 (6)
2 x b2
2xb
Detail B
E1 (6)
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
Lead tip
View A - A
Conforms to JEDEC outline TO-220AC
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
MIN. MAX.
NOTES
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
A 4.25 4.65 0.167 0.183
E1
6.86 8.89 0.270 0.350
6
A1 1.14 1.40 0.045 0.055
E2 - 0.76 - 0.030 7
A2 2.56 2.92 0.101 0.115
e 2.41 2.67 0.095 0.105
b 0.69 1.01 0.027 0.040
e1 4.88 5.28 0.192 0.208
b1
0.38 0.97 0.015 0.038
4
H1 6.09 6.48 0.240 0.255 6, 7
b2 1.20 1.73 0.047 0.068
L 13.52 14.02 0.532 0.552
b3
1.14 1.73 0.045 0.068
4
L1
3.32 3.82 0.131 0.150
2
c 0.36 0.61 0.014 0.024
L3 1.78 2.13 0.070 0.084
c1
0.36 0.56 0.014 0.022
4
L4
0.76 1.27 0.030 0.050
2
D
14.85 15.25 0.585 0.600
3
Ø P 3.54 3.73 0.139 0.147
D1 8.38 9.02 0.330 0.355
Q 2.60 3.00 0.102 0.118
D2 11.68 12.88 0.460 0.507 6
90° to 93° 90° to 93°
E
10.11 10.51 0.398 0.414
3, 6
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221 For technical questions within your region, please contact one of the following:
Revision: 07-Mar-11
www.vishay.com
1

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부품번호상세설명 및 기능제조사
VS-HFA15TB60-N3

Ultrafast Soft Recovery Diode

Vishay
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