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PDF MMBT2222A Data sheet ( Hoja de datos )
| Número de pieza | MMBT2222A | |
| Descripción | NPN Transistors | |
| Fabricantes | Kexin | |
| Logotipo |  |
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 1. NPN Planar Transistor - Cystek  Hay una vista previa y un enlace de descarga de MMBT2222A (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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NPN Transistors
MMBT2222A (KMBT2222A)
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
12
0.95 +0.1
-0.1
) 1.9 +0.1
-0.2
s st s
Unit: mm
0.15 +0.02
-0.02
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Power Dissipation
Thermal resistance from junction to ambient
Junction Temperature
Storage Temperature Range
■ Electrical Characteristics Ta = 25℃
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
TJ
Tstg
Rating
70
40
6
600
250
417
150
-55 to 150
Unit
V
mA
mW
℃/W
℃
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector cutoff current
Collector cut-off current
Emitter cutoff current
DC current gain
Symbol
Test conditions
V(BR)CBO IC = 100 μA, IE = 0
V(BR)CEO IC = 10 mA, IB = 0
V(BR)EBO IE = 100 μ A, IC = 0
ICBO VCB=60V, IE=0
ICEX VCE=30V,VEB(off)=-3V
IEBO VEB= 3V, IC=0
VCE=10V, IC= 0.1mA
hFE VCE=10V, IC= 150mA
VCE=10V, IC= 500mA
collector-emitter saturation voltage *
VCE(sat) IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
base-emitter saturation voltage *
Transition frequency
Delay time
Rise time
Storage time
Fall time
VBE(sat)
fT
td
tr
ts
tf
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
IC = 20 mA; VCE = 20 V; f = 100 MHz
VCC=30V, VBE(off)=-0.5V,
IC=150mA , IB1= 15mA
VCC=30V, IC=150mA,IB1=-IB2=15mA
* pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
■ Mrarking
Marking
1P
1. Base
2. Emitter
3. Collector
Min Typ Max Unit
75 V
40 V
6V
100 nA
10 nA
100 nA
40
100 300
42
0.3 V
1V
0.6 1.2 V
2V
300 MHz
10 ns
25 ns
225 ns
60 ns
ec c
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MMBT2222A.PDF ] | |
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