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부품번호 | MMBT2222A 기능 |
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기능 | NPN Transistor | ||
제조업체 | RECTRON | ||
로고 | |||
전체 5 페이지수
MMBT2222A
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* Epitaxial planar die construction
* Complementary PNP Type available(MMBT2907A)
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )
RATINGS
Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25oC
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
PD
TJ
TSTG
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Thermal Resistance Junction to Ambient
R qJA
Notes: 1. Alumina=0.4*0.3*0.024in. 99.5% alumina.
2. " Fully ROHS Compliant ", "100% Sn plating (Pb-free)".
COLLECTOR
3
1
BASE
2
EMITTER
0.006(0.15)
0.003(0.08)
SOT-23
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
0.019(2.00) 1
0.071(1.80)
0.118(3.00)
3 0.110(2.80)
2
Dimensions in inches and (millimeters)
VALUE
300
150
-55 to +150
UNITS
mW
oC
oC
MIN.
-
TYP.
-
MAX.
417
UNITS
oC/W
2007-5
RATING AND CHARACTERISTICS CURVES ( MMBT2222A )
10
RS=OPTIMUM
SOURCE
8.0
IC=1.0mA,RS=150W
500uA,RS=200W
RESISTANCE
100uA,RS=2.0KW
6.0 50uA,RS=4.0KW
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (KHz)
Figure 5.Frequency Effects
30
50 100
20
Ceb
10
7.0
5.0
3.0
2.0
0.1 0.2 0.3
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
Figure 7.Capacitances
CCb
20 30 50
1.0
TJ=25OC
0.8
VBE(sat)@IC/IB=10
0.6
1.0V
VBE(on)@VCE=10V
0.4
0.2
VCE(sat)@IC/IB=10
0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 9."On" Voltages
500 1.0k
10
f=1.0KHz
8.0
IC=50uA
6.0
100uA
500uA
1.0mA
4.0
2.0
0
50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
RS,SOURCE RESISTANCE (OHMS)
Figure 6.Source Resistance Effects
500
VCE=20V
TJ=25OC
300
200
100
70
50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 8.Currunt-Gain Bandwidth Product
+0.5
0 RqVC for VCE(sat)
-0.5
-1.0
-1.5
-2.0 RqVB for VBE
-2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA)
Figure 10.Temperature Coefficients
4페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
MMBT2222 | GENERAL PURPOSE NPN TRANSISTORS | TIPTEK |
MMBT2222 | Diode ( Rectifier ) | American Microsemiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |