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PDF RQJ0204XGDQA Data sheet ( Hoja de datos )

Número de pieza RQJ0204XGDQA
Descripción Silicon P-Channel MOS FET
Fabricantes Renesas 
Logotipo Renesas Logotipo



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RQJ0204XGDQA
Silicon P Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 219 mΩ typ (VGS = –4.5 V, ID = –0.8 A)
Low drive current
High speed switching
2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Note: Marking is “XG”.
Preliminary Datasheet
R07DS0293EJ0500
Rev.5.00
Jan 10, 2014
3
D
G 1. Source
2 2. Gate
3. Drain
S
1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
ID(pulse) Note1
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 μs, duty cycle 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings
–20
+8 / –12
–1.6
–4.0
–1.6
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS0293EJ0500 Rev.5.00
Jan 10, 2014
Page 1 of 7

1 page




RQJ0204XGDQA pdf
RQJ0204XGDQA
Dynamic Input Characteristics
0
VDS
0
10
5 V
10 V
20 VDD = 20 V
VDD = 20 V
10 V
5 V
4
8
30
ID = –1.6 A
Tc = 25°C
VGS
12
01 2 3 4 56
Gate Charge Qg (nc)
1000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0 V
f = 1 MHz
Ciss
100
10
–0
Coss
Crss
–5 –10 –15 –20
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
–4
Pulse Test
Tc = 25°C
–3
–2 10V
5V
–1 5, 10 V
0 VGS = 0 V
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage VSD (V)
Preliminary
Switching Characteristics
1000
100
VDD = 10 V
VGS = 4.5 V
Rg = 4.7 Ω
PW = 5 μs
Tc = 25°C
tr
td(off)
10 td(on)
tf
1
0.1 1 10
Drain Current ID (A)
Input Capacitance vs.
Gate to Source Voltage
320
300
280
260
240 VDS = 0 V
f = 1 MHz
220
10 8 6 4 2 0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
–0.7
–0.6
VGS = 0
–0.5
–0.4
ID = –10 mA
–0.3
–1 mA
–0.2
–0.1
25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0293EJ0500 Rev.5.00
Jan 10, 2014
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