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부품번호 | RQJ0304DQDQS 기능 |
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기능 | Silicon P-Channel MOS FET | ||
제조업체 | Renesas | ||
로고 | |||
전체 8 페이지수
RQJ0304DQDQS
Silicon P Channel MOS FET
Power Switching
Features
• Low gate drive
VDSS : –30 V and 2.5 V gate drive
• Low drive current
• High speed switching
• Small traditional Power package (UPAK)
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK R )
1
2
3
4
1G
Notes: Marking is "DQ".
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Thermal resistance
VDSS
VGSS
ID
ID(pulse) Note1
IDR
Pch Note2
Rth(ch-a) Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
REJ03G1778-0100
Rev.1.00
Mar 16, 2009
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Ratings
–30
+8 / –12
–2.6
–10
2.6
1.5
83
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C /W
°C
°C
REJ03G1778-0100 Rev.1.00 Mar 16, 2009
Page 1 of 7
RQJ0304DQDQS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.8
Pulse Test
Tc = 25°C
–0.6
–0.4
ID = –2.0 A
–1.5 A
–0.2
0
0
–1.0 A
–0.5 A
–2 –4 –6 –8 –10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Case Temperature (1)
0.6
ID = –2.0 A
0.5
–1.5 A
0.4
–1.0 A
0.3
–0.5A
0.2
0.1
0
–25 0
Pulse Test
VGS = –2.5 V
25 50 75 100 125 150
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
10
Pulse Test
VDS = –10 V
–25°C
25°C
Tc = 75°C
1
–0.1
–1 –10
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
1
VGS = –2.5 V
–4.5 V
0.1 –10 V
0.01
–0.1
Pulse Test
Tc = 25°C
–1 –10
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Case Temperature (2)
0.35
0.3
0.25
ID = –2.0 A
–1.5 A
0.2 –1.0 A
0.15 –0.5A
0.1
0.05 Pulse Test
VGS = –4.5 V
0
–25 0 25 50
75 100 125 150
Case Temperature Tc (°C)
Zero Gate Voltage Drain current vs.
Case Temperature
–10000
Pulse Test
VGS = 0 V
–1000 VDS = –30 V
–100
–10
–1
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
REJ03G1778-0100 Rev.1.00 Mar 16, 2009
Page 4 of 7
4페이지 RQJ0304DQDQS
Package Dimensions
Package Name
UPAK
JEITA Package Code
SC-62
RENESAS Code
PLZZ0004CA-A
Previous Code
UPAK / UPAKV
MASS[Typ.]
0.050g
4.5 ± 0.1
1.8 Max
φ1
0.53 Max
0.48 Max
1.5 1.5
3.0
1.5 ± 0.1
0.44 Max
0.44 Max
(1.5)
Unit: mm
Ordering Information
Part No.
RQJ0304DQDQSTL-E
Quantity
1000 pcs.
Shipping Container
φ178 mm reel, 12 mm Emboss taping
REJ03G1778-0100 Rev.1.00 Mar 16, 2009
Page 7 of 7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
RQJ0304DQDQA | Silicon P-Channel MOS FET | Renesas |
RQJ0304DQDQS | Silicon P-Channel MOS FET | Renesas |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |