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부품번호 | RQJ0305EQDQA 기능 |
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기능 | Silicon P-Channel MOS FET | ||
제조업체 | Renesas | ||
로고 | |||
전체 9 페이지수
RQJ0305EQDQA
Silicon P Channel MOS FET
Power Switching
Features
• Low gate drive
VDSS : –30 V and 2.5 V gate drive
• Low drive current
• High speed switching
• Small traditional package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Notes: Marking is "EQ".
Preliminary Datasheet
R07DS0297EJ0300
Rev.3.00
Jan 10, 2014
3
D
2
G
S
1
1. Source
2. Gate
3. Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
ID(pulse) Note1
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 μs, Duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
Ratings
–30
+8 / –12
–2.4
–10
2.4
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS0297EJ0300 Rev.3.00
Jan 10, 2014
Page 1 of 8
RQJ0305EQDQA
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
–0.4
Pulse Test
Tc = 25°C
–0.3
–0.2
ID = –2.4 A
–2.0 A
–0.1
0
0
–1.5 A
–1.0 A
–2 –4 –6 –8 –10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Case Temperature (1)
0.3
ID = –2.4 A
0.25 –2.0 A
–1.5 A
0.2
–1.0 A
0.15 –0.5A
0.1
0.05 Pulse Test
VGS = –2.5 V
0
–25 0 25 50
75 100 125 150
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
10
Pulse Test
VDS = –10 V
–25°C
25°C
Tc = 75°C
1
–0.1 1
10
Drain Current ID (A)
Preliminary
Static Drain to Source on State Resistance
vs. Drain Current
1
VGS = –2.5 V
–4.5 V
0.1 –10 V
0.01
–0.1
Pulse Test
Tc = 25°C
–1 –10 –100
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Case Temperature (2)
0.2
0.16
–1.5 A
ID = –2.4 A
–2.0 A
0.12
–1.0 A
–0.5A
0.08
0.02
Pulse Test
VGS = –4.5 V
0
–25 0 25 50
75 100 125 150
Case Temperature Tc (°C)
Zero Gate Voltage Drain current vs.
Case Temperature
–10000
Pulse Test
VGS = 0 V
–1000 VDS = –30 V
–100
–10
–1
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0297EJ0300 Rev.3.00
Jan 10, 2014
Page 4 of 8
4페이지 RQJ0305EQDQA
Package Dimensions
JEITA Package Code
SC-59A
Preliminary
RENESAS Code
PLSP0003ZB-A
Previous Code
MPAK(T) / MPAK(T)V
MASS (Typ) [g]
0.011
D
e
A
Qc
E HE
AA
xM S A
b
L
L1
A3
LP
b
c
A-A Section
A2 A
A1
S
Reference Dimensions in millimeters
Symbol Min Nom Max
A 1.0 ⎯ 1.3
A1 0 ⎯ 0.1
A2 1.0 1.1 1.2
A3 ⎯ 0.25 ⎯
b 0.35 0.4 0.5
c 0.1 0.16 0.26
D 2.7 ⎯ 3.1
E 1.35 1.5 1.65
e ⎯ 0.95 ⎯
HE 2.2 2.8 3.0
L 0.35 ⎯ 0.75
L1 0.15 ⎯ 0.55
LP 0.25 ⎯ 0.65
x ⎯ ⎯ 0.05
Q ⎯ 0.3 ⎯
© 2013 Renesas Electronics Corporation. All rights reserved.
R07DS0297EJ0300 Rev.3.00
Jan 10, 2014
Page 7 of 8
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
RQJ0305EQDQA | Silicon P-Channel MOS FET | Renesas |
RQJ0305EQDQS | Silicon P-Channel MOS FET | Renesas |
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