RQJ0306FQDQS Datasheet PDF - Renesas
| Part Number | RQJ0306FQDQS | |
| Description | Silicon P-Channel MOS FET | |
| Manufacturers | Renesas | |
| Logo |  |
|
|
There is a preview and RQJ0306FQDQS download ( pdf file ) link at the bottom of this page. Total 8 Pages | ||
Preview 1 page No Preview Available !
RQJ0306FQDQS
Silicon P Channel MOS FET
Power Switching
Features
• Low gate drive
VDSS : –30 V and 2.5 V gate drive
• Low drive current
• High speed switching
• Small traditional power package (UPAK)
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK R )
1
2
3
4
1G
Notes: Marking is "FQ".
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Thermal resistance
VDSS
VGSS
ID
ID(pulse) Note1
IDR
Pch Note2
Rth(ch-a) Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
REJ03G1780-0100
Rev.1.00
Mar 16, 2009
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Ratings
–30
+8 / –12
–4
–16
4
1.5
83
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C /W
°C
°C
REJ03G1780-0100 Rev.1.00 Mar 16, 2009
Page 1 of 7
|
| |
 
RQJ0306FQDQS
Dynamic Input Characteristics
00
VDD = –10 V
–25 V
–10 –2
VDD = –10 V
–20
–25 V
–4
–30
ID = –3 A
Tc = 25°C
–40
0 2468
Gate Charge Qg (nC)
–6
–8
10
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100 Coss
Crss
10
VGS = 0 V
f = 1 MHz
1
–0 –5 –10 –15 –20 –25 –30
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
–10
Pulse Test
Tc = 25°C
–8
–6 –10 V
–4.5 V
–4
–2.5 V
–2 –0 V
VGS = 2.5, 4.5, 10 V
0
0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4
Source to Drain Voltage VSD (V)
1000
Switching Characteristics
100 tr
td(off)
td(on)
10 tf
VGS = –4.5 V, VDD = –10 V
Rg = 4.7 Ω, duty ≤ 1 %
Tc = 25°C
1
–0.01
–0.1
–1
Drain Current ID (A)
–10
Input Capacitance vs.
Gate to Source Voltage
950
900
850
800
750
700 VDS = 0
f = 1MHz
650
–10 –8 –6 –4 –2 0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
–0.6
VGS = 0
–0.5
–0.4
–0.3
ID = –10 mA
–1 mA
–0.2
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
REJ03G1780-0100 Rev.1.00 Mar 16, 2009
Page 5 of 7
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for RQJ0306FQDQS electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ RQJ0306FQDQS.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| RQJ0306FQDQA | The function is Silicon P-Channel MOS FET. Renesas | |
| RQJ0306FQDQS | The function is Silicon P-Channel MOS FET. Renesas | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
RQJ0
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||