DataSheet.es    


PDF RQJ0304DQDQA Data sheet ( Hoja de datos )

Número de pieza RQJ0304DQDQA
Descripción Silicon P-Channel MOS FET
Fabricantes Renesas 
Logotipo Renesas Logotipo



Hay una vista previa y un enlace de descarga de RQJ0304DQDQA (archivo pdf) en la parte inferior de esta página.


Total 9 Páginas

No Preview Available ! RQJ0304DQDQA Hoja de datos, Descripción, Manual

RQJ0304DQDQA
Silicon P Channel MOS FET
Power Switching
Features
Low gate drive
VDSS : –30 V and 2.5 V gate drive
Low drive current
High speed switching
Small traditional package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Notes: Marking is "DQ".
Preliminary Datasheet
R07DS0296EJ0300
Rev.3.00
Jan 10, 2014
3
D
2
G
S
1
1. Source
2. Gate
3. Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
ID(pulse) Note1
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 μs, Duty cycle 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
Ratings
–30
+8 / –12
–1.8
–8
1.8
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS0296EJ0300 Rev.3.00
Jan 10, 2014
Page 1 of 8

1 page




RQJ0304DQDQA pdf
RQJ0304DQDQA
Dynamic Input Characteristics
0
VDD = –10 V
–25 V
–10
0
–2
–20
VDD = –10 V
–25 V
–30
ID = 2.0 A
Tc = 25°C
–40
0 1234
Gate Charge Qg (nC)
–4
–6
–8
5
Typical Capacitance vs.
Drain to Source Voltage
1000
VGS = 0 V
f = 1 MHz
Ciss
100
Coss
10 Crss
1
–0 –5 –10 –15 –20 –25 –30
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
–10
Pulse Test
Tc = 25°C
–8
–6 –10 V
–4.5 V
–4
–2.5 V
–2 VGS = 0, 2.5, 4.5, 10 V
0
0
–0.4 –0.8
–1.2
–1.6
Source to Drain Voltage VSD (V)
Preliminary
Switching Characteristics
1000
VGS = –4.5 V, VDD = –10 V
Rg = 4.7 Ω, duty 1 %
Tc = 25°C
100
td(on)
td(off)
tr
10
tf
1
–0.01
–0.1 –1
Drain Current ID (A)
–10
Input Capacitance vs.
Gate to Source Voltage
360
340
320
300
280
260 VDS = 0
f = 1MHz
240
–10 –8 –6 –4 –2 0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
–0.6
VGS = 0
–0.5
ID = –10 mA
–0.4
–0.3
–1 mA
–0.2
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0296EJ0300 Rev.3.00
Jan 10, 2014
Page 5 of 8

5 Page










PáginasTotal 9 Páginas
PDF Descargar[ Datasheet RQJ0304DQDQA.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
RQJ0304DQDQASilicon P-Channel MOS FETRenesas
Renesas
RQJ0304DQDQSSilicon P-Channel MOS FETRenesas
Renesas

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar