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RQJ0601DGDQS 데이터시트 PDF




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기능 Silicon P-Channel MOS FET
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RQJ0601DGDQS 데이터시트, 핀배열, 회로
RQJ0601DGDQS
Silicon P Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 124 mtyp (VGS = –10 V, ID = –1.4 A)
Low drive current
High speed switching
4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK R )
1
2
3
4
Note: Marking is “DG”.
REJ03G1266-0300
Rev.3.00
Jun 05, 2006
2, 4
D
1. Gate
1 G 2. Drain
3. Source
4. Drain
S
3
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID
Note1
(pulse)
Body - drain diode reverse drain current
Channel dissipation
Channel dissipation
IDR
Pch Note2
Pch
Note1
(pulse)
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 1 s, duty cycle 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings
–60
+10 / –20
–2.8
–4.2
–2.8
1.5
5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Rev.3.00 Jun 05, 2006 page 1 of 6




RQJ0601DGDQS pdf, 반도체, 판매, 대치품
RQJ0601DGDQS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.8
Pulse Test
Tc = 25°C
–0.6
–0.4
–0.2
0
0
0.2 A
1.5 A
1 A
0.5 A
–5 –10 –15 –20
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Case Temperature
300
Pulse Test
VGS = 4.5 V
ID = –1.5 A
250
1 A
200
0.5 A
0.2 A
150
100
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
10
–25°C
25°C
1
Tc = 75°C
0.1
–0.1
–1.0
Pulse Test
VDS = 10 V
–10.0
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
Tc = 25°C
VDS = 4.5 V
0.1 10 V
0.01
–0.1
–1
Drain Current ID (A)
–10
Static Drain to Source on State Resistance
vs. Case Temperature
250
Pulse Test
VGS = 10 V
200
150
100
ID = 0.2 A, –0.5 A, –1 A, –1.5 A
50
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Zero Gate Voltage Drain current vs.
Case Temperature
–1000
–100
Pulse Test
VGS = 0 V
VDS = 60 V
–10
–1
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Rev.3.00 Jun 05, 2006 page 4 of 6

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RQJ0601DGDQS 전자부품, 판매, 대치품
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
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cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
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© 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0

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RQJ0601DGDQS

Silicon P-Channel MOS FET

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