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부품번호 | RQK2501YGDQA 기능 |
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기능 | Silicon N-Channel MOS FET | ||
제조업체 | Renesas | ||
로고 | |||
전체 9 페이지수
RQK2501YGDQA
Silicon N Channel MOS FET
Power Switching
Features
• High drain to source voltage and Low gate drive
VDSS : 250 V and 2.5 V gate drive
• Low drive current
• High speed switching
• Small traditional package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Preliminary Datasheet
R07DS0312EJ0400
Rev.4.00
Jan 10, 2014
3
D
2
G
S
1
1. Source
2. Gate
3. Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID(pulse) Note1
Body - drain diode reverse drain current
Channel dissipation
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 μs, Duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
Ratings
250
±10
0.4
1.6
0.4
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS0312EJ0400 Rev.4.00
Jan 10, 2014
Page 1 of 8
RQK2501YGDQA
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
3.0
Pulse Test
Tc = 25°C
2.5
2.0
0.4 A
1.5
1.0 0.2 A
0.5 0.1 A
0
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Case Temperature (1)
10
8
ID = 0.4 A
6
4
2
0
–25 0
0.2 A
0.1 A
Pulse Test
VGS = 4 V
25 50 75 100 125 150
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
10
Pulse Test
VDS = 10 V
1 –25°C
25°C
0.1 Tc = 75°C
0.01
0.01
0.1 1
Drain Current ID (A)
10
Preliminary
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
Tc = 25°C
10 VGS = 2.5 V
10 V
4.5 V
1
0.1 1
Drain Current ID (A)
10
Static Drain to Source on State Resistance
vs. Case Temperature (2)
10
Pulse Test
VGS = 2.5 V
8
ID = 0.4 A
6
0.1A
4 0.2 A
2
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Zero Gate Voltage Drain current vs.
Case Temperature
10
Pulse Test
VGS = 0 V
1 VDS = 250 V
0.1
0.01
0.001
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0312EJ0400 Rev.4.00
Jan 10, 2014
Page 4 of 8
4페이지 RQK2501YGDQA
Package Dimensions
JEITA Package Code
SC-59A
Preliminary
RENESAS Code
PLSP0003ZB-A
Previous Code
MPAK(T) / MPAK(T)V
MASS (Typ) [g]
0.011
D
e
A
Qc
E HE
AA
xM S A
b
L
L1
A3
LP
b
c
A-A Section
A2 A
A1
S
Reference Dimensions in millimeters
Symbol Min Nom Max
A 1.0 ⎯ 1.3
A1 0 ⎯ 0.1
A2 1.0 1.1 1.2
A3 ⎯ 0.25 ⎯
b 0.35 0.4 0.5
c 0.1 0.16 0.26
D 2.7 ⎯ 3.1
E 1.35 1.5 1.65
e ⎯ 0.95 ⎯
HE 2.2 2.8 3.0
L 0.35 ⎯ 0.75
L1 0.15 ⎯ 0.55
LP 0.25 ⎯ 0.65
x ⎯ ⎯ 0.05
Q ⎯ 0.3 ⎯
© 2013 Renesas Electronics Corporation. All rights reserved.
R07DS0312EJ0400 Rev.4.00
Jan 10, 2014
Page 7 of 8
7페이지 | |||
구 성 | 총 9 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
RQK2501YGDQA | Silicon N-Channel MOS FET | Renesas |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |